2N5886

® 2N5886 HIGH CURRENT SILICON NPN POWER TRANSISTOR s s STMicroelectronics PREFERRED SALESTYPE HIGH CURRENT CAPABILITY APPLICATIONS GENERAL PURPOSE SWITCHING AND AMPLIFIER s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT s 1 2 TO-3 DESCRIPTION The 2N5886 is a silicon Epitaxial-Base NPN power transistor mounted in Jedec TO-3 metal case. It is inteded for use in power linear amplifiers and switching applications. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T c ≤ 25 o C Storage Temperature Max. Operating Junction Temperature Value 80 80 5 25 50 7.5 200 -65 to 200 200 Unit V V V A A A W o o C C January 2000 1/4 2N5886 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 0.875 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEV I CBO I CEO I EBO Parameter Collector Cut-off Current (V BE = -1.5V) Collector Cut-off Current (I E = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 80 V V CE = 80 V V CB = 80 V V CE = 40 V V EB = 5 V I C = 200 mA 80 T c = 150 o C Min. Typ. Max. 1 10 1 2 1 Unit mA mA mA mA mA V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) ∗ V BE(sat) ∗ V BE ∗ h FE ∗ Collector-Emitter Saturation Voltage Base-...