DatasheetsPDF.com

2N2222AHR Dataheets PDF



Part Number 2N2222AHR
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description Hi-Rel NPN transistor
Datasheet 2N2222AHR Datasheet2N2222AHR Datasheet (PDF)

2N2222AHR Datasheet Rad-Hard 50 V, 0.8 A NPN transistor 3 1 2 LCC-3 3 4 1 2 UB Pin 4 in UB is connected to the metallic lid. C (3) (2) B E (1) DS10450 Product status link 2N2222AHR Features Vceo IC(max.) 50 V • Hermetic packages • ESCC qualified • 100 krad 0.8 A HFE at 10 V, 150 mA > 100 Tj(max.) 200 °C Description The 2N2222AHR is a bipolar transistor able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID). .

  2N2222AHR   2N2222AHR


Document
2N2222AHR Datasheet Rad-Hard 50 V, 0.8 A NPN transistor 3 1 2 LCC-3 3 4 1 2 UB Pin 4 in UB is connected to the metallic lid. C (3) (2) B E (1) DS10450 Product status link 2N2222AHR Features Vceo IC(max.) 50 V • Hermetic packages • ESCC qualified • 100 krad 0.8 A HFE at 10 V, 150 mA > 100 Tj(max.) 200 °C Description The 2N2222AHR is a bipolar transistor able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID). Qualified as per ESCC 5201/002 specification and available in LCC-3 and UB hermetic packages, it is specifically recommended for space and harsh environment applications and suitable for low current and high precision circuits such preamplifiers, oscillators, current mirror configuration. In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence. Product summary Part-number 2N2222ARUBx 2N2222AUBx SOC2222ARHRx SOC2222AHRx Product summary Qualification system Agency specification ESCC Flight 5201/002 ESCC Flight 5201/002 ESCC Flight 5201/002 ESCC Flight 5201/002 Note: See Table 7 for ordering information. Package UB UB LCC-3 LCC-3 Radiation level 100 krad - 100 krad - DS6561 - Rev 25 - January 2022 For further information contact your local STMicroelectronics sales office. www.st.com 1 Electrical ratings Table 1. Absolute maximum ratings Symbol VCBO VCEO VEBO IC Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Parameter PTOT Total dissipation at Tamb ≤ 25 °C LCC-3 and UB LCC-3 and UB(1) TOP Operating temperature range TJ Max. operating junction temperature 1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate. Table 2. Thermal data Symbol Parameter RthJA Thermal resistance junction-ambient (max) for LCC-3 and UB 1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate. 2N2222AHR Electrical ratings Value Unit 75 V 50 V 6 V 0.8 A 0.5 W 0.73 -65 to 200 °C 200 °C LCC-3 and UB Value 350 240(1) Unit °C/W DS6561 - Rev 25 page 2/16 2N2222AHR Electrical characteristics 2 Electrical characteristics Table 3. Electrical characteristics (Tamb = 25 °C unless otherwise specified) Symbol ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) hFE hfe COBO ton toff Parameter Test conditions Collector-base cut-off current (IE = 0) VCB = 60 V VCB = 60 V, Tamb = 150 °C Emitter-base cut-off current (IC = 0) VEB = 3 V Collector-base breakdown voltage (IE = 0) IC = 100 µA Collector-emitter breakdown voltage (IB = 0) IC = 10 mA Emitter-base breakdown voltage (IC = 0) IC = 100 µA Collector-emitter saturation voltage IC = 150 mA, IB = 15 mA Base-emitter saturation voltage IC = 150 mA, IB = 15 mA IC = 0.1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V DC current gain IC = 150 mA, VCE = 10 V IC = 500 mA, VCE = 10 V IC = 10 mA, Tamb = -55 °C, VCE = 10 V Small signal current gain IC = 20 mA, f = 100 MHz, VCE = 20 V Output capacitance (IE = 0) 100 kHz ≤ f ≤ 1 MHz, VCB = 10 V Turn-on time ICC = 150 mA, IB1 = 15 mA, VCC = 30 V Turn-off time ICC = 150 mA, IB1 = IB2 = 15 mA, VCC = 30 V Min. Max. 10 10 10 75 50 6 0.3 1.2 35 75 100 300 40 35 2.5 8 35 285 1. Pulsed duration = 300 µs, duty cycle ≤ 1.5% Unit nA µA nA V V V V V pF ns ns DS6561 - Rev 25 page 3/16 2.1 2N2222AHR Radiation assurance Radiation assurance Radiation test are guaranteed in compliance with ESCC 22900 and ESCC 5201/002 specifications. Each lot is tested in radiation according to the following procedure: • Radiation condition of 0.1 rad (Si)/s. • Test of 11 samples by wafer, 5 biased at 80% of V(BR)CEO, 5 unbiased and for reference. • Acceptance criteria in compliance with the post radiation electrical characteristics as per Table 4. Table 4. ESCC 5201/002 post radiation electrical characteristics (Tamb = 25 °C unless otherwise specified) Symbol ICBO IEBO V(BR)CBO V(BR)CEO(1) V(BR)EBO VCE(sat)(1) VBE(sat)(1) [hFE](1) Parameter Collector cut-off current (IE = 0) Emitter cut-off current (IC= 0) Collector-base breakdown voltage (IE= 0) Collector-emitter breakdown voltage (IB = 0) Emitter-base breakdown voltage (IC= 0) Collector-emitter saturation voltage Base-emitter saturation voltage Post irradiation gain calculation (2) Test conditions VCB= 60 V VEB = 3 V IC=100 μA IC = 10 mA IE = 100 μA IC=150 mA, IB = 15 mA IC=150 mA, IB = 15 mA IC= 0.1 mA, VCE= 10 V IC= 10 mA, VCE= 10 V IC= 150 mA, VCE= 10 V IC= 500 mA, VCE= 10 V Min. 75 50 6 [17.5] [37.5] [50] [20] Max Unit 10 nA 10 nA V V V 0.3 V 1.2 V 300 1. Pulsed duration = 300 μs, duty cycle ≥ 2 % 2. The post-irradiation gain calculation of [hFE], made using hFE measurements from prior to and on completion of irradiation testing and after each annealing step if any, shall be as specified in MILSTD-750 method 1019. DS6561 - Rev 25 page 4/16 2N2222AHR Electrical .


2N2219AHR 2N2222AHR 2N2905AHR


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)