Document
2N2222AHR
Datasheet
Rad-Hard 50 V, 0.8 A NPN transistor
3
1 2
LCC-3
3 4
1 2
UB
Pin 4 in UB is connected to the metallic lid.
C (3)
(2) B
E (1)
DS10450
Product status link 2N2222AHR
Features
Vceo
IC(max.)
50 V
• Hermetic packages • ESCC qualified • 100 krad
0.8 A
HFE at 10 V, 150 mA > 100
Tj(max.) 200 °C
Description
The 2N2222AHR is a bipolar transistor able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID).
Qualified as per ESCC 5201/002 specification and available in LCC-3 and UB hermetic packages, it is specifically recommended for space and harsh environment applications and suitable for low current and high precision circuits such preamplifiers, oscillators, current mirror configuration.
In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence.
Product summary
Part-number
2N2222ARUBx 2N2222AUBx SOC2222ARHRx SOC2222AHRx
Product summary
Qualification system
Agency specification
ESCC Flight
5201/002
ESCC Flight
5201/002
ESCC Flight
5201/002
ESCC Flight
5201/002
Note:
See Table 7 for ordering information.
Package
UB UB LCC-3 LCC-3
Radiation level
100 krad -
100 krad -
DS6561 - Rev 25 - January 2022 For further information contact your local STMicroelectronics sales office.
www.st.com
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol VCBO VCEO VEBO IC
Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current
Parameter
PTOT
Total dissipation at Tamb ≤ 25 °C
LCC-3 and UB LCC-3 and UB(1)
TOP
Operating temperature range
TJ
Max. operating junction temperature
1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate.
Table 2. Thermal data
Symbol
Parameter
RthJA Thermal resistance junction-ambient (max) for LCC-3 and UB 1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate.
2N2222AHR
Electrical ratings
Value
Unit
75
V
50
V
6
V
0.8
A
0.5
W
0.73
-65 to 200
°C
200
°C
LCC-3 and UB Value
350
240(1)
Unit °C/W
DS6561 - Rev 25
page 2/16
2N2222AHR
Electrical characteristics
2
Electrical characteristics
Table 3. Electrical characteristics (Tamb = 25 °C unless otherwise specified)
Symbol ICBO IEBO
V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat)
hFE
hfe COBO
ton
toff
Parameter
Test conditions
Collector-base cut-off current (IE = 0)
VCB = 60 V VCB = 60 V, Tamb = 150 °C
Emitter-base cut-off current (IC = 0)
VEB = 3 V
Collector-base breakdown voltage
(IE = 0)
IC = 100 µA
Collector-emitter breakdown voltage
(IB = 0)
IC = 10 mA
Emitter-base breakdown voltage
(IC = 0)
IC = 100 µA
Collector-emitter saturation voltage
IC = 150 mA, IB = 15 mA
Base-emitter saturation voltage
IC = 150 mA, IB = 15 mA
IC = 0.1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
DC current gain
IC = 150 mA, VCE = 10 V
IC = 500 mA, VCE = 10 V
IC = 10 mA, Tamb = -55 °C, VCE = 10 V
Small signal current gain
IC = 20 mA, f = 100 MHz, VCE = 20 V
Output capacitance (IE = 0)
100 kHz ≤ f ≤ 1 MHz, VCB = 10 V
Turn-on time
ICC = 150 mA, IB1 = 15 mA, VCC = 30 V
Turn-off time
ICC = 150 mA, IB1 = IB2 = 15 mA, VCC = 30 V
Min.
Max. 10 10
10
75
50
6
0.3
1.2
35
75
100
300
40
35
2.5
8
35
285
1. Pulsed duration = 300 µs, duty cycle ≤ 1.5%
Unit nA µA nA V V V V V
pF ns ns
DS6561 - Rev 25
page 3/16
2.1
2N2222AHR
Radiation assurance
Radiation assurance
Radiation test are guaranteed in compliance with ESCC 22900 and ESCC 5201/002 specifications. Each lot is tested in radiation according to the following procedure: • Radiation condition of 0.1 rad (Si)/s. • Test of 11 samples by wafer, 5 biased at 80% of V(BR)CEO, 5 unbiased and for reference. • Acceptance criteria in compliance with the post radiation electrical characteristics as per Table 4.
Table 4. ESCC 5201/002 post radiation electrical characteristics (Tamb = 25 °C unless otherwise specified)
Symbol ICBO IEBO
V(BR)CBO V(BR)CEO(1) V(BR)EBO VCE(sat)(1) VBE(sat)(1)
[hFE](1)
Parameter Collector cut-off current (IE = 0) Emitter cut-off current (IC= 0) Collector-base breakdown voltage (IE= 0) Collector-emitter breakdown voltage (IB = 0) Emitter-base breakdown voltage (IC= 0) Collector-emitter saturation voltage Base-emitter saturation voltage
Post irradiation gain calculation (2)
Test conditions VCB= 60 V VEB = 3 V IC=100 μA IC = 10 mA IE = 100 μA IC=150 mA, IB = 15 mA IC=150 mA, IB = 15 mA IC= 0.1 mA, VCE= 10 V IC= 10 mA, VCE= 10 V IC= 150 mA, VCE= 10 V IC= 500 mA, VCE= 10 V
Min.
75 50 6
[17.5] [37.5] [50] [20]
Max Unit
10 nA
10 nA
V
V
V
0.3
V
1.2
V
300
1. Pulsed duration = 300 μs, duty cycle ≥ 2 %
2. The post-irradiation gain calculation of [hFE], made using hFE measurements from prior to and on completion of irradiation testing and after each annealing step if any, shall be as specified in MILSTD-750 method 1019.
DS6561 - Rev 25
page 4/16
2N2222AHR
Electrical .