Document
2N2219AHR
Hi-Rel NPN bipolar transistor 40 V, 0.8 A
Datasheet — production data
Features
BVCEO IC (max) HFE at 10 V - 150 m Operating temperature range
■ ■ ■ ■ ■
40 V 0.8 A > 100 - 65 °C to + 200 °C
Hi-Rel NPN bipolar transistor Linear gain characteristics ESCC qualified European preferred part list - EPPL Radiation level: lot specific total dose contact marketing for specified level Figure 1. Internal schematic diagram
TO-39
Description
The 2N2219AHR is a silicon planar epitaxial NPN transistor in a TO-39 package. It is specifically designed for aerospace Hi-Rel applications, and ESCC qualified in accordance with the 5201-003 specification. In case of discrepancies between this datasheet and ESCC detailed specification, the latter prevails.
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Table 1.
Device summary
Package TO-39 TO-39 Lead finish Gold Solder Dip Gold Marking 520100301 520100302 2N2219AT1 Type ESCC Flight Engineering model EPPL Yes Packaging Strip pack Strip pack
Order codes 2N2219AHR 2N2219AT1
October 2012
This is information on a product in full production.
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Electrical ratings
2N2219AHR
1
Electrical ratings
Table 2.
Symbol VCBO VCEO VEBO IC PTOT TSTG TJ
Absolute maximum ratings
Parameter Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Total dissipation at Tamb ≤ 25°C Total dissipation at Tc ≤ 25°C Storage temperature Max. operating junction temperature Value 75 40 6 0.8 0.8 3 -65 to 200 200 Unit V V V A W W °C °C
Table 3.
Symbol RthJC RthJA
Thermal data
Parameter Thermal resistance junction-case __ Thermal resistance junction-ambient __ max max Value 58 218 Unit °C/W °C/W
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2N2219AHR
Electrical characteristics
2
Electrical characteristics
Tcase = 25 °C unless otherwise specified. Table 4.
Symbol ICBO IEBO
Electrical characteristics
Parameter Collector cut-off current (IE = 0) Emitter cut-off current (IC = 0) Collector-base breakdown voltage (IE = 0) Test conditions VCB = 60 V VCB = 60 V, Tamb = 150 °C VEB = 3 V Min. Typ. Max. 10 10 10 Unit nA µA nA
V(BR)CBO
IC = 10 µA
75
-
V
Collector-emitter V(BR)CEO (1) breakdown voltage (IB = 0) V(BR)EBO Emitter-base breakdown voltage (IC = 0) Collector-emitter saturation voltage Base-emitter saturation voltage
IC = 10 mA
40
-
V
IE = 10 µA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA
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6
0.3 1 1.2
V V V V
VCE(sat) (1) VBE(sat) (1)
75 100 40 35 2.5 -
hFE (1)
DC current gain
IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V IC = 500 mA, VCE = 10 V IC = 10 mA, VCE = 10 V Tamb = -55 °C VCE = 20 V, IC = 20 mA f = 100 MHz VCB = 10 V 100 kHz ≤ f ≤1 MHz VCC = 30 V, IC = 150 mA IB1 = 15 mA VCC = 30 V, IC = 150 mA IB1 = -IB2 = 15 mA
300 -
hfe CCBO ton toff
Small signal current gain Output capacitance (IE = 0) Turn-on time Turn-off time
8 35 300
pF ns ns
1. Pulsed duration = 300 µs, duty cycle ≤2%
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Electrical characteristics
2N2219AHR
2.1
Electrical characteristics (curves)
Figure 2.
(
6#% 6
DC current gain
Figure 3.
H&%
Collector emitter saturation voltage
#
#
#
#
# #
,F$
!-V
,F$
!-V
Figure 4.
Base emitter saturation voltage
H&%
,F$
#
#
#
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!-V
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2N2219AHR
Electrical characteristics
2.2
Test circuit
Figure 5. Resistive load switching test circuit
1. Fast electronic switch 2. Non-inductive resistor
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Package mechanical data
2N2219AHR
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
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2N2219AHR
Package mechanical data
Table 5.
Dim.
TO-39 mechanical data
mm Min. A B C D E F G H I L 9.10 4.93 0.85 0.75 42° 9.20 5.23 0.95 0.85 48° Typ. 12.70 0.40 0.58 6.00 8.15 Max. 14.20 0.49 0.74 6.40 8.25
Figure 6.
TO-39 drawing
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Revision history
2N2219AHR
4
Revision history
Table 6.
Date 09-Jan-2009 05-Jan-2010 04-Oct-2012
Document revision history
Revision 1 2 3 Initial release Modified Table 1 on page 1 Minor text changes. Section 2.1: Electrical ch.