SDT06S60

SDP06S60 SDT06S60 Silicon Carbide Schottky Diode Worlds first 600V Schottky diode Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior Ideal diode for Power Factor Correction up to 1200W 1) No forward recovery thinQ!¥ SiC Schottky Diode Product Summary VRRM Qc IF PG-TO220-2-2. 600 21 6 P-TO220 V nC A Type SDP06S60 SDT06S60 Package P-TO220-3 PG-TO220-2-2. Ordering Code Q67040-S4371 www.DataSheet.net/ Marking D06S60 D06S60 Pin 1 n.c. Pin 2 C Pin 3 A Q67040-S4446 C A Maximum Ratings, at Tj = 25 °C, unless otherwise specified Symbol Parameter Continuous forward current, TC=100°C RMS forward current, f=50Hz TC=25°C, tp=10ms Value 6 8.4 21.5 28 60 2.3 600 600 57.6 -55... +175 Unit A IF IFRMS Surge non repetitive forward current, sine halfwave IFSM Repetitive peak forward current Tj=150°C, TC=100°C, D=0.1 IFRM IFMAX ³i2dt VRRM VRSM Ptot Tj , Tstg Page 1 Non repetitive peak forward current tp=10µs, TC=25°C i 2t value, TC=25°C, tp=10ms Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation, TC=25°C Operating and storage temperature Rev. 2.4 A²s V W °C 2008-06-02 Datasheet pdf - http://www.DataSheet4U.co.kr/ SDP06S60 SDT06S60 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded RthJC RthJA Symbol min. - Values typ. max. 2.6 62 Unit K/W Electric...