SiA447DJ

New Product SiA447DJ Vishay Siliconix P-Channel 12 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) 0.0135 at VGS = - 4.5 V - 12 0.0194 at VGS = - 2.5 V 0.0344 at VGS = - 1.8 V 0.0710 at VGS = - 1.5 V ID (A) - 12a - 12a - 12a -3 31 nC Qg (Typ.) FEATURES TrenchFET® Power MOSFET Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance 100 % Rg Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PowerPAK SC-70-6L-Single 1 D 2 D 3 6 D 5 D S 4 S 2.05 mm G APPLICATIONS Providing low voltage drop in Smart Phones, Tablet PCs, Mobile Computing: - Battery Switches - Battery Management - Load Switches Marking Code BRX Part # code XXX Lot Traceability and Date code P-Channel MOSFET D G S 2.05 mm Ordering Information: SiA447DJ-T4-GE3 (Lead (Pb)-free and Halogen-free) SiA447DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg PD IDM IS ID www.DataSheet.net/ Symbol VDS VGS Limit - 12 ±8 - 12a - 12a - 12a, b, c - 10b, c - 50 - 12a - 2.9b, c...