2N5784
MECHANICAL DATA Dimensions in mm (inches)
8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335)
SILICON EPITAXIAL NPN TRANSISTOR
4.19 (0.165) 4.95 (0.195)
12.70 (0.500) min.
0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia.
FEATURES
General purpose power transistor for switching and linear applications in a hermetic TO–39 package.
5.08 (0.200) typ.
2 1
0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034)
2.54 (0.100)
3
45˚
TO–39 PACKAGE
PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO VCER(sus) VCEO(sus) VEBO IC IB PD PD TJ , TSTG TL Collector – Base Voltage Collector – Emitter Sustaining Voltage RBE = 100W Collector – Emitter Sustaining Voltage Emitter – Base Voltage Continuous Collector Current Continuous Collector Current Total Device Dissipation TA = 25°C Derate above 25°C Total Device Dissipation TC = 25°C Derate above 25°C Operating Junction and Storage Temperature Range Lead temperature, ³ 1/32” (0.8mm) from seating plane for 10 s max.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail:
[email protected] Website: http://www.semelab.co.uk
80V 80V 65V 5V 3.5A 1A 10W 0.057W/°C 1W 0.0057W/°C –65 to +200°C 230°C
Prelim. 8/96
Semelab plc.
2N5784
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Parameter ICER ICEX ICEO IEBO hFE* Collector Cut-off Current Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Conditions VCE = 65V RBE = 100W VCE = 75V VCE = 50V VBE = -5V VCE = 2V VCE = 2V
1
Min. TC = 150°C VBE = -1.5V TC = 150°C IB = 0 IC = 0 IC = 1A IC = 3.2A IB = 0 RBE = 100W IC = 1A IB = 100mA IC = 100mA IC = 100mA IC = 1A 5 25 20 4 65 80
Typ.
Max. 10 1 10 1 100 10 100
Unit
mA
mA
RBE = 100W
mA mA mA
— V
mA
VCEO(sus)* Collector – Emitter Sustaining Voltage 1 IC = 100mA VCER(sus)* Collector – Emitter Sustaining Voltage VBE Base – Emitter Voltage Collector – Emitter Saturation Voltage Small Signal Common – Emitter Current Gain hfe tON tOFF RqJC RqJA Small Signal Common – Emitter Current Gain Turn-on Time Turn-off Time Thermal Resistance Junction – Case Thermal Resistance Junction – Ambient
2
IC = 100mA VCE = 2V IC = 1A VCE = -2V f = 200kHz VCE = 2V f = 1kHz VCE = 30V
1.5 0.5 20
½hfe½
VCE(sat)
V — —
5 15 17.5 17.5
IB1 = IB2 = 100mA
ms
°C/W
NOTES
* 1) 2) 3) Pulse Test: tp = 300ms, d = 1.8%. These tests MUST NOT be measured on a curve tracer. Measured 1/4” (6.35 mm) from case. Lead resistance is critical in this test. Measured at a frequency where ½hfe½ is decreasing at approximately 6dB per octave.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail:
[email protected] Website: http://www.semelab.co.uk
Prelim. 8/96
.