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2N5784 Dataheets PDF



Part Number 2N5784
Manufacturers Seme LAB
Logo Seme LAB
Description SILICON EPITAXIAL NPN TRANSISTOR
Datasheet 2N5784 Datasheet2N5784 Datasheet (PDF)

2N5784 MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) SILICON EPITAXIAL NPN TRANSISTOR 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. FEATURES General purpose power transistor for switching and linear applications in a hermetic TO–39 package. 5.08 (0.200) typ. 2 1 0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 3 45˚ TO–39 PACKAGE PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector .

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2N5784 MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) SILICON EPITAXIAL NPN TRANSISTOR 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. FEATURES General purpose power transistor for switching and linear applications in a hermetic TO–39 package. 5.08 (0.200) typ. 2 1 0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 3 45˚ TO–39 PACKAGE PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCER(sus) VCEO(sus) VEBO IC IB PD PD TJ , TSTG TL Collector – Base Voltage Collector – Emitter Sustaining Voltage RBE = 100W Collector – Emitter Sustaining Voltage Emitter – Base Voltage Continuous Collector Current Continuous Collector Current Total Device Dissipation TA = 25°C Derate above 25°C Total Device Dissipation TC = 25°C Derate above 25°C Operating Junction and Storage Temperature Range Lead temperature, ³ 1/32” (0.8mm) from seating plane for 10 s max. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 80V 80V 65V 5V 3.5A 1A 10W 0.057W/°C 1W 0.0057W/°C –65 to +200°C 230°C Prelim. 8/96 Semelab plc. 2N5784 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Parameter ICER ICEX ICEO IEBO hFE* Collector Cut-off Current Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Conditions VCE = 65V RBE = 100W VCE = 75V VCE = 50V VBE = -5V VCE = 2V VCE = 2V 1 Min. TC = 150°C VBE = -1.5V TC = 150°C IB = 0 IC = 0 IC = 1A IC = 3.2A IB = 0 RBE = 100W IC = 1A IB = 100mA IC = 100mA IC = 100mA IC = 1A 5 25 20 4 65 80 Typ. Max. 10 1 10 1 100 10 100 Unit mA mA RBE = 100W mA mA mA — V mA VCEO(sus)* Collector – Emitter Sustaining Voltage 1 IC = 100mA VCER(sus)* Collector – Emitter Sustaining Voltage VBE Base – Emitter Voltage Collector – Emitter Saturation Voltage Small Signal Common – Emitter Current Gain hfe tON tOFF RqJC RqJA Small Signal Common – Emitter Current Gain Turn-on Time Turn-off Time Thermal Resistance Junction – Case Thermal Resistance Junction – Ambient 2 IC = 100mA VCE = 2V IC = 1A VCE = -2V f = 200kHz VCE = 2V f = 1kHz VCE = 30V 1.5 0.5 20 ½hfe½ VCE(sat) V — — 5 15 17.5 17.5 IB1 = IB2 = 100mA ms °C/W NOTES * 1) 2) 3) Pulse Test: tp = 300ms, d = 1.8%. These tests MUST NOT be measured on a curve tracer. Measured 1/4” (6.35 mm) from case. Lead resistance is critical in this test. Measured at a frequency where ½hfe½ is decreasing at approximately 6dB per octave. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 8/96 .


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