Dual-P Enhancement Mode Power MOSFET
Elektronische Bauelemente
SSG4953
-6 A, -30 V, RDS(ON) 45 m Dual-P Enhancement Mode Power MOSFET
RoHS Compliant Produ...
Description
Elektronische Bauelemente
SSG4953
-6 A, -30 V, RDS(ON) 45 m Dual-P Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSG4953 uses advanced trench technology to provide excellent on-resistance, low gate charge and operation with gate voltages as low as 2.5V. The device is suitable for use as a load switch or in PWM applications. It may be used in a common drain arrangement to from a bidirectional blocking switch.
FEATURES
Simple Drive Requirement Lower On-resistance Low Gate Charge
MARKING
4953SS
= Date Code
PACKAGE INFORMATION
Package
MPQ
SOP-8
3K
Leader Size 13’ inch
SOP-8
B
A HG
LD M
C
JK F
N E
REF.
A B C D E F G
Millimeter
Min. Max.
5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25
1.27 TYP.
REF.
H J K L M N
Millimeter
Min. Max.
0.35 0.49 0.375 REF.
45° 1.35 1.75 0.10 0.25
0.25 REF.
S1 D1 G1 D1 S2 D2 G2 D2
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Drain-Source Voltage Gate-Source Voltage
Parameter
Symbol
VDS VGS
Continuous Drain Current @ VGS=10V 1
Pulsed Drain Current 2 Single Pulse Avalanche Energy 3
TA = 25°C TA = 100°C
ID
IDM EAS
Avalanche Current Total Power Dissipation 4
TA = 25°C
IAS PD
Operating Junction & Storage Temperature Range
TJ, TSTG
Thermal Resistance Ratings
Thermal Resistance Junction-Ambient 1 (Max.)
RθJA
Thermal Resistance Junction-Case 1 (Max.)
RθJC
Ratings
-30 ±20 -6 -4 -12 108 19 1.5 -55 ~ 150
83 60
Unit
V V
A
...
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