2N5682

2N5681 2N5682 SILICON NPN TRANSISTORS s s SGS-THOMSON PREFERRED SALESTYPES NPN TRANSISTOR APPLICATIONS GENERAL PURPOSE SWITCHING s GENERAL PURPOSE AMPLIFIERS s DESCRIPTION The 2N5681, 2N5682 are high voltage silicon epitaxial planar NPN transistors in Jedec TO-39 metal case intended for use as drivers for high power transistors in general purpose, amplifier and switching applications. The complementary PNP types are the 2N5679 and 2N5680 respectively. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC IB P tot P tot T stg Tj Parameter 2N5680 Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Base Current Total Dissipation at T c ≤ 25 o C Total Dissipation at T amb ≤ 50 o C Storage Temperature Max. Operating Junction Temperature 100 100 4 1 0.5 10 1 -65 to 200 200 Value 2N5682 120 120 V V V A A W W o o Unit C C July 1997 1/4 2N5681 / 2N5682 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 17.5 175 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEV Parameter Collector Cut-off Current (V BE = -1.5V) Test Conditions for 2N5681 for 2N568 2 T c = 150 o C for 2N5681 for 2N5682 for 2N5681 for 2N5682 for 2N5681 for 2N5682 V EB = 4 V I C = 10 mA for 2N5681 for 2N5682 I C = 250 mA I C = 500 mA IC = 1 A I C = 250 mA I C = 250 mA IC = 1 A I C = 0.2 A I C = 100 mA IE = 0 I...