2N5657

2N5657 SILICON NPN TRANSISTOR s s SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The 2N5657 is a silicon epitaxial-base NPN transistor in Jedec SOT-32 plastic package. It is intended for use output amplifiers, low current, high voltage converters and AC line relays. 3 2 1 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB P t ot T stg Tj June 1997 Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T c ≤ 25 C St orage Temperature Max. Operating Junction Temperature o Value 375 350 6 0.5 1 0.25 20 -65 to 150 150 Uni t V V V A A A W o o C C 1/5 2N5657 THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max 6.25 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO I CEV I CEO I EBO Parameter Collector Cut-off Current (IE = 0) Collector Cut-off Current (V BE = -1.5V) Collector Cut-off Current (IB = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = 375 V V CE = 350 V V CE = 250 V V CE = 250 V V EB = 6 V I C = 1 mA I C = 100 mA I C = 0.1 A I C = 0.25 A I C = 0.5 A I C = 0.1 A IC IC IC IC = = = = 50 mA 0.1 A 0.25 A 0.5 A L = 50 mH I B = 10 mA IB = 25 mA I B = 0.1 A VCE = 10 V V CE V CE VCE V CE = 10 = 10 = 10 = 10 V V V V f = 1KHz f =10MHz 25 30 15 5 20 10 25 MHz pF 350 350 1 2.5 10 1 250 Min. Typ . Max. 0.01 0.1 1 0.1 0.01 Un it mA...