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SSM3J307T

Toshiba Semiconductor
Part Number SSM3J307T
Manufacturer Toshiba Semiconductor
Description Silicon P-Channel MOSFET
Published Sep 16, 2012
Detailed Description SSM3J307T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSV) SSM3J307T ○ Power Management Switch App...
Datasheet PDF File SSM3J307T PDF File

SSM3J307T
SSM3J307T

Overview
SSM3J307T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSV) SSM3J307T ○ Power Management Switch Applications ○ High-Speed Switching Applications • 1.
5 V drive • Low ON-resistance: Ron = 83 mΩ (max) (@VGS = -1.
5 V) Ron = 56 mΩ (max) (@VGS = -1.
8 V) Ron = 40 mΩ (max) (@VGS = -2.
5 V) Ron = 31 mΩ (max) (@VGS = -4.
5 V) Absolute Maximum Ratings (Ta = 25°C) 2.
9±0.
2 1.
9±0.
2 0.
95 0.
95 +0.
2 2.
8-0.
3 +0.
2 1.
6-0.
1 Unit: mm 0.
4±0.
1 １ ２ ３ 0～0.
1 0.
15 0.
16±0.
05 Characteristic Symbol Rating Unit 0.
7±0.
05 Drain-Source voltage VDSS -20 V Gate-Source voltage VGSS ±8 V Drain current DC ID (Note 1) -5.
0 A Pulse IDP (Note 1) -10 Drain power dissipation PD (Note 2)...


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