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DMN1019UFDE Dataheets PDF



Part Number DMN1019UFDE
Manufacturers Diodes
Logo Diodes
Description N-Channel MOSFET
Datasheet DMN1019UFDE DatasheetDMN1019UFDE Datasheet (PDF)

ADVANCE INFORMATION DMN1019UFDE 12V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 12V RDS(ON) max 10mΩ @ VGS = 4.5V 12mΩ @ VGS = 2.5V 14mΩ @ VGS = 1.8V 18mΩ @ VGS = 1.5V 41mΩ @ VGS = 1.2V Package U-DFN2020-6 (Type E) ID max TA = +25°C 11A 10 9A 8A 5A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features  0..

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ADVANCE INFORMATION DMN1019UFDE 12V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 12V RDS(ON) max 10mΩ @ VGS = 4.5V 12mΩ @ VGS = 2.5V 14mΩ @ VGS = 1.8V 18mΩ @ VGS = 1.5V 41mΩ @ VGS = 1.2V Package U-DFN2020-6 (Type E) ID max TA = +25°C 11A 10 9A 8A 5A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features  0.6mm Profile – Ideal for Low Profile Applications  PCB Footprint of 4mm2  Low Gate Threshold Voltage  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotiveproducts/.  This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/ Applications  Load Switching  Battery Management Application  Power Management Functions Pin1 U-DFN2020-6 (Type E) ESD PROTECTED Bottom View Mechanical Data  Case: U-DFN2020-6  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4  Weight: 0.008 grams (Approximate) D Pin Out Bottom View G Gate Protection Diode S Equivalent Circuit Ordering Information (Note 4) Notes: Part Number DMN1019UFDE-7 Marking N7 Reel Size (inches) 7 Quantity Per Reel 3,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. DMN1019UFDE Datasheet number: DS35561 Rev. 6 - 2 1 of 8 www.diodes.com March 2020 © Diodes Incorporated ADVANCE INFORMATION DMN1019UFDE Marking Information Site 1 Date Code Key Year Code Month Code N7 = Product Type Marking Code YM YM = Date Code Marking N7 Y = Year (ex: H = 2020) M = Month (ex: 9 = September) 2011 … 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029 Y … H I J K L M N O P R Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 1 2 3 4 5 6 7 8 9 O N D Site 2 Date Code Key Year Code Week Code Internal Code Code N7 = Product Type Marking Code YW X YWX = Date Code Marking N7 Y = Year (ex: 0 = 2020) W = Week (ex: a = Week 27; z Represents Week 52 and 53) X = Internal Code (ex: U = Monday) 2011 1 Sun T … 2020 … 0 1-26 A-Z Mon U 2021 1 2022 2 Tue V 2023 3 2024 4 27-52 a-z Wed W 2025 5 2026 6 Thu X 2027 7 2028 8 2029 9 53 z Fri Sat Y Z DMN1019UFDE Datasheet number: DS35561 Rev. 6 - 2 2 of 8 www.diodes.com March 2020 © Diodes Incorporated ADVANCE INFORMATION Maximum Ratings (@TA = +25°C, unless otherwise specified.) Drain-Source Voltage Gate-Source Voltage Characteristic Continuous Drain Current (Note 5) VGS = 4.5V Steady State t<5s Maximum Continuous Body Diode Current Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) TA = +25°C TA = +70°C TA = +25°C TA = +70°C Symbol VDSS VGSS ID ID IS IDM DMN1019UFDE Value Unit 12 V ±8 V 11 9 A 14 11 A 3.0 A 100 A Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range TA = +25°C TA = +70°C Steady State t<5s TA = +25°C TA = +70°C Steady State t<5s Symbol PD RJA PD RJA RJC TJ, TSTG Value 0.69 0.44 182 118 2.17 1.38 58 38 10 -55 to +150 Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. Unit W °C/W W °C/W °C P(PK), PEAK TRANSIENT POIWER (W) 100 90 80 70 60 Single Pulse RJA = 178C/W RJA(t) = r(t) * RJA TJ - TA = P * RJA(t) DUT on MRP 50 40 30 20 10 0 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (sec) Fig. 1 Single Puls.


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