Power MOSFET
Advance Technical Information
HiperFETTM Power MOSFET Q3-Class
(Electrically Isolated Tab)
N-Channel Enhancement Mode F...
Description
Advance Technical Information
HiperFETTM Power MOSFET Q3-Class
(Electrically Isolated Tab)
N-Channel Enhancement Mode Fast Intrinsic Rectifier
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C
MMIX1F44N100Q3
VDSS ID25
RDS(on) trr
= = ≤ ≤
1000V 30A 245mΩ 300ns
D
G S
Maximum Ratings 1000 1000 ±30 ±40 30 110 44 4 50 694 -55 ... +150 150 -55 ... +150
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V V V V A A A J V/ns W °C °C °C °C °C V~ N/lb. g Features Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Substrate - Excellent Thermal Transfer - Increased Temperature and Power Cycling Capability - High Isolation Voltage (2500V~) z Low Intrinsic Gate Resistance z Low Package Inductance z Fast Intrinsic Rectifier z Low RDS(on) and QG
z
Isolated Tab D
TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
S G
G = Gate S = Source
D = Drain
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 50/60 Hz, 1 Minute Mounting Force
300 260 2500 50..200 / 11..45 8
Advantages Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = ±30V, VDS = 0V VDS = VDSS, VGS = 0V VGS = 10V, ID = 22A, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 1000 3.5 6.5 V V Applications
z z z z z z
High Power Density Easy to Mount Space Savings
±...
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