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SC00380912 Dataheets PDF



Part Number SC00380912
Manufacturers Skyworks Solutions
Logo Skyworks Solutions
Description Mis Chip Capacitors
Datasheet SC00380912 DatasheetSC00380912 Datasheet (PDF)

MIS Chip Capacitors SC Series Features ■ Readily Available From Stock ■ High Reliability Silicon Oxide–Nitride Dielectric ■ Low Loss — Typically 0.04 dB in a 50 Ω System ■ Operation through 26 GHz ■ Wide Temperature Operation Absolute Maximum Ratings Characteristic Operating Temp Range (TOP) Value -65 to +200°C -65 to +200°C 100 V Description Alpha’s MIS Chip Capacitors are available in a wide range of sizes and capacitance values. They are frequently used in applications requiring DC blocking.

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MIS Chip Capacitors SC Series Features ■ Readily Available From Stock ■ High Reliability Silicon Oxide–Nitride Dielectric ■ Low Loss — Typically 0.04 dB in a 50 Ω System ■ Operation through 26 GHz ■ Wide Temperature Operation Absolute Maximum Ratings Characteristic Operating Temp Range (TOP) Value -65 to +200°C -65 to +200°C 100 V Description Alpha’s MIS Chip Capacitors are available in a wide range of sizes and capacitance values. They are frequently used in applications requiring DC blocking, and RF bypassing, or as a fixed capacitance tuning element in filters, oscillators, and matching networks. The devices have a dielectric composed of thermally grown silicon dioxide over which a layer of silicon nitride is deposited. This dielectric possesses a low temperature coefficient of capacitance, very high insulation resistance. The devices also exhibit excellent long term stability making them suitable for high reliability applications. The capacitors have a high dielectric breakdown which permits the use of thin dielectrics resulting in larger capacitance per unit area than our previous catalog offerings. The temperature coefficient is less that 50 ppm/°C, and operation is suitable from -65°C to 200°C. Compared to ceramic capacitors, Skyworks’ MIS chip capacitors offer higher Q, and a lower insertion loss of 0.04 dB, in a 50 Ω system. Insulation resistance is greater than 105M Ω. To accommodate high volume automated assembly methods, wafers can be supplied on expanded film frame. To reduce cost, chips can be supplied with only sample testing packaged in vials. Packaging in waffle packs with 100% electrical test and visual inspection is always available if required. Storage Temp Range (TSTG) Dielectric Withstanding Voltage Electrical Specifications Capacitance Range1: 0.8 to 1000 pF Temperature Coefficient: 50 ppm/°C Typical Capacitance Tolerance2: ±20% Operating Temperature: -65°C to 200°C Dielectric Withstanding Voltage: 100 V Insulation Resistance: 105 Megohms Typical Leakage Current: Typ. < 1 nA www.DataSheet.net/ Typical SPDT Switch BIAS OUTPUT C2 C3 BIAS INPUT 1 C1 D1 D2 C4 INPUT 2 C2, C3 — Chip MIS Capacitor C1, C4 — Chip or Beam — Lead MIS Capacitor D1, D2 DSG6474 Beam — Lead PIN Diode Skyworks Solutions, Inc. [978] 241-7000 • Fax [978] 241-7906 • Email [email protected] • www.skyworksinc.com Specifications subject to change without notice. 10/02A 1 Datasheet pdf - http://www.DataSheet4U.co.kr/ MIS Chip Capacitors SC Series Electrical Specifications Part Number SC00080710 SC00080912 SC00120710 SC00120912 SC00180710 SC00180912 SC00260710 SC00260912 SC00380710 ♦ SC00380912 SC00560710 ♦ SC00560912 SC00680710 SC00680912 SC00820710 ♦ SC00820912 SC00821518 SC01000710 ♦ SC01000912 SC01001518 SC01500710 SC01500912 SC01501518 ♦ SC02200912 SC02201518 SC03301518 SC04701518 ♦ SC06801518 SC10002430 ♦ SC10003440 SC22203440 ♦ SC33303440 SC50004450 ♦ SC99906068 Capacitance (+ 20%) 0.8 0.8 1.2 1.2 1.8 1.8 2.6 2.6 3.8 3.8 5.6 5.6 6.8 6.8 8.2 8.2 8.2 10 10 10 15 15 15 22 22 33 47 68 100 100 222 333 500 1000 Chip Dimensions (+ 1 mil) 7 mil Pad/10 mil Chip 9 mil Pad/12 mil Chip 7 mil Pad/10 mil Chip 9 mil Pad/12 mil Chip 7 mil Pad/10 mil Chip 9 mil Pad/12 mil Chip 7 mil Pad/10 mil Chip 9 mil Pad/12 mil Chip 7 mil Pad/10 mil Chip 9 mil Pad/12 mil Chip 7 mil Pad/10 mil Chip 9 mil Pad/12 mil Chip 7 mil Pad/10 mil Chip 9 mil Pad/12 mil Chip 7 mil Pad/10 mil Chip 9 mil Pad/12 mil Chip 15 mil Pad/18 mil Chip 7 mil Pad/10 mil Chip 9 mil Pad/12 mil Chip 15 mil Pad/18 mil Chip 7 mil Pad/10 mil Chip 9 mil Pad/12 mil Chip 15 mil Pad/18 mil Chip 9 mil Pad/12 mil Chip 15 mil Pad/18 mil Chip 15 mil Pad/18 mil Chip 15 mil Pad/18 mil Chip 15 mil Pad/18 mil Chip 24 mil Pad/30 mil Chip 34 mil Pad/40 mil Chip 34 mil Pad/40 mil Chip 34 mil Pad/40 mil Chip 44 mil Pad/50 mil Chip 60 mil Pad/68 mil Chip Example Part Number Structure — SCXXXXYYZZ where: SC = Silicon Capacitor XXXX = Capacitance (pF) YY = Square Contact Size (mils) ZZ = Square Chip Size (mils) ZZ ± 0.001˚ YY ± 0.001˚ CHIP THICKNESS 0.005 ± 0.001˚ Performance Data www.DataSheet.net/ Tests on typical MIS capacitors at L and S band show insertion loss to be 1/2 to 1/3 that of equivalent ceramic type capacitors, without any of the associated resonance problems. Power tests indicate that the only limitation is the actual breakdown voltage of the device (see data section). A typical insertion loss versus frequency graph is shown in Figure 1. This data is taken from an actual tests circuit with series mounted beam-lead or chip capacitors on a 50 Ω microstrip transmission line. The apparent higher loss at lower frequencies on the lower capacitance units is strictly due to the capacitive reactance of the capacitor. 10.0 1 pF Insertion Loss (dB) 1.0 8.2 pF 100 pF 47 pF 100 pF 0.01 2 6 10 14 18 1–47 pF ♦ Available through distribution. 0.10 Frequency (GHz) Figure 1. Typical Insertion Loss vs. Frequency (50 Ω System) 2 Skyworks Solutions, Inc. [978] 241-7000 •.


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