2N5555

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5555/D JFET Switching N–Channel — Depletion 3 GATE 1 DRAIN 2N5555 2 SOURCE MAXIMUM RATINGS Rating Drain – Source Voltage Drain – Gate Voltage Gate – Source Voltage Forward Gate Current Total Device Dissipation @ TC = 25°C Derate above 25°C Junction Temperature Range Storage Temperature Range Symbol VDS VDG VGS IGF PD TJ Tstg Value 25 25 25 10 350 2.8 – 65 to +150 – 65 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C °C °C 1 2 3 CASE 29–04, STYLE 5 TO–92 (TO–226AA) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Gate – Source Breakdown Voltage (IG = 10 µAdc, VDS = 0) Gate Reverse Current (VGS = 15 Vdc, VDS = 0) Drain Cutoff Current (VDS = 12 Vdc, VGS = – 10 V) Drain Cutoff Current (VDS = 12 Vdc, VGS = – 10 V, TA = 100°C) V(BR)GSS IGSS ID(off) 25 — — — — 1.0 10 2.0 Vdc nAdc nAdc µAdc ON CHARACTERISTICS Zero – Gate –Voltage Drain Current(1) (VDS = 15 Vdc, VGS = 0) Gate–Source Forward Voltage (IG(f) = 1.0 mAdc, VDS = 0) Drain–Source On–Voltage (ID = 7.0 mAdc, VGS = 0) Static Drain–Source On Resistance (ID = 0.1 mAdc, VGS = 0) IDSS VGS(f) VDS(on) rDS(on) 15 — — — — 1.0 1.5 150 mAdc Vdc Vdc Ohms SMALL– SIGNAL CHARACTERISTICS Small–Signal Drain–Source “ON” Resistance (VGS = 0, ID = 0, f = 1.0 kHz) Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 0, VGS = 10 Vdc, f = 1.0 MHz) rds(on) Ciss Crss — — — 150 5.0 1....