MTN1308E3

CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET Spec. No. : C440E3 Issued Date : 2009.02.23 Revised Date : Page No. : 1/6 MTN1308E3 Description BVDSS RDSON ID 75V 13 mΩ 80A The MTN1308E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant package www.DataSheet.net/ Symbol MTN1308E3 Outline TO-220 G：Gate D：Drain S：Source G D S MTN1308E3 CYStek Product Specification Datasheet pdf - http://www.DataSheet4U.co.kr/ CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C) Parameter Symbol Spec. No. : C440E3 Issued Date : 2009.02.23 Revised Date : Page No. : 2/6 Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current @TC=100°C Pulsed Drain Current @ VGS=10V (Note 1) Avalanche Current Single Pulse Avalanche Energy @ L=0.5mH, ID=40 A, RG=25Ω Repetitive Avalanche Energy @ L=0.1mH (Note 2) Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm) from case for 10 seconds Maximum Temperature for Soldering @ Package Body for 10 seconds Total Power Dissipation (TC=25℃) Linear Derating Factor Operating Junction and Storage Temperature Note : *1.Pulse width limited by maximum j...