Document
2N/SST5484 Series
Vishay Siliconix
N-Channel JFETs
2N5484 2N5485 2N5486
PRODUCT SUMMARY
Part Number
2N/SST5484 2N/SST5485 2N/SST5486
SST5484 SST5485 SST5486
VGS(off) (V)
–0.3 to –3 –0.5 to –4 –2 to –6
V(BR)GSS Min (V)
–25 –25 –25
gfs Min (mS)
3 3.5 4
IDSS Min (mA)
1 4 8
FEATURES
D Excellent High-Frequency Gain: Gps 13 dB (typ) @ 400 MHz – 5485/6 D Very Low Noise: 2.5 dB (typ) @ 400 MHz – 5485/6 D Very Low Distortion D High AC/DC Switch Off-Isolation
BENEFITS
D D D D D Wideband High Gain Very High System Sensitivity High Quality of Amplification High-Speed Switching Capability High Low-Level Signal Amplification
APPLICATIONS
D D D D High-Frequency Amplifier/Mixer Oscillator Sample-and-Hold Very Low Capacitance Switches
DESCRIPTION
The 2N/SST5484 series consists of n-channel JFETs designed to provide high-performance amplification, especially at high frequencies up to and beyond 400 MHz. The 2N series, TO-226AA (TO-92), and SST series, TO-236 (SOT-23), packages provide low-cost options and are available with tape-and-reel to support automated assembly (see Packaging Information).
TO-226AA (TO-92)
D 1 D 1
TO-236 (SOT-23 )
3 S 2 S 2
G
G
3 Top View 2N5484 2N5485 2N5486
Top View SST5484 (H4)* SST5485 (H5)* SST5486 (H6)* *Marking Code for TO-236
For applications information see AN102 and AN105. Document Number: 70246 S-04028—Rev. E, 04-Jun-01 www.vishay.com
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2N/SST5484 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW Notes a. Derate 2.8 mW/_C above 25_C
SPECIFICATIONS FOR 2N SERIES (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N5484 2N5485 2N5486
Parameter Static
Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Currentc
Symbol
Test Conditions
Typa
Min
Max
Min
Max
Min Max Unit
V(BR)GSS VGS(off) IDSS IGSS IG VGS(F)
IG = –1 mA , VDS = 0 V VDS = 15 V, ID = 10 nA VDS = 15 V, VGS = 0 V VGS = –20 V, VDS = 0 V TA = 100_C VDG = 10 V, ID = 1 mA IG = 10 mA , VDS = 0 V
–35
–25 –0.3 1 –3 5 –1 –200
–25 –0.5 4 –4 10 –1 –200
–25 V –2 8 –6 20 –1 –200 nA pA V mA
–0.002 –0.2 –20 0.8
Gate-Source Forward Voltagec
Dynamic
Common-Source Forward Transconductanceb Common-Source Output Conductanceb Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Common-Source Output Capacitance Equivalent Input Noise Voltagec gfs gos Ciss .