2N5339X

LAB MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) SEME 2N5338X 2N5339X NPN SILICON TRANSISTORS 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. DESCRIPTION 5.08 (0.200) typ. 2 1 0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) The 2N5339X silicon expitaxial planar NPN transistor in jedec TO-39 metal case intended for use as drivers for high power transistors in general purpose, amplifier and switching circuit 3 45˚ TO-39 Pin 1 – Emitter Pin 2 – Base Pin 3 – Collector ABSOLUTE MAXIMUM RATINGS TCASE = 25°c unless otherwise stated VCBO VCEO VEBO IC ICM IB Ptot Tstg Tj Collector – Base Voltage(IE = 0) Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current Total Dissipation at Tcase £ 25°C Tamb £ 25°C Storage Temperature Range Junction temperature 100V 100V 6V 5A 7A 1A 6W 1W –65 to +200°C 200°C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 11/99 LAB THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 29.2 175 SEME 2N5338X 2N5339X °C/W °C/W ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter ICBO ICEX ICEO Collector Cut Off Current Collector Cut Off Current Collector Cut Off Current Test Conditions IE = 0 VBE = 1.5V IB = ...