2N5336 2N5338 2N5337 2N5339
SILICON NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMIC...
2N5336 2N5338 2N5337 2N5339
SILICON
NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5336 series devices are silicon epitaxial planar
NPN transistors designed for power amplifier and switching power supplies where very low saturation voltage and high speed switching at high current levels are needed.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO VCEO VEBO
IC IB PD TJ, Tstg
ΘJC
2N5336
2N5338
2N5337
2N5339
80 100
80 100
6.0
5.0
1.0
6.0
-65 to +200
29
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) 2N5336
2N5337
SYMBOL TEST CONDITIONS
MIN MAX
ICBO
VCB=Rated VCBO
ICEV
VCE=75V, VEB=1.5V
ICEV
VCE=90V, VEB=1.5V
ICEV
VCE=75V, VEB=1.5V, TC=150°C
ICEV
VCE=90V, VEB=1.5V, TC=150°C
ICEO
VCE=75V
ICEO
VCE=90V
IEBO
VEB=6.0V
BVCEO IC=50mA
VCE(SAT) IC=2.0A, IB=200mA
VCE(SAT) IC=5.0A, IB=500mA
VBE(SAT) IC=2.0A, IB=200mA
VBE(SAT) IC=5.0A, IB=500mA
hFE VCE=2.0V, IC=500mA (2N5336, 2N5338)
hFE VCE=2.0V, IC=500mA (2N5337, 2N5339)
hFE VCE=2.0V, IC=2.0A (2N5336, 2N5338)
hFE VCE=2.0V, IC=2.0A (2N5337, 2N5339)
hFE VCE=2.0V, IC=5.0A (2N5336, 2N5338)
hFE VCE=2.0V, IC=5.0A (2N5337, 2N5339)
80 30 60 30 60 20 40
10 10 1.0 100 100 0.7 1.2 1.2 1.8 120 240 -
2N5338 2N5339 MIN ...