(JCS4N60x) N-CHANNEL MOSFET
N N-CHANNEL MOSFET
JCS4N60V/R/S/B/C/F
MAIN CHARACTERISTICS
Package
ID VDSS Rdson (@Vgs=10V) Qg
z z z UPS
4.0 ...
Description
N N-CHANNEL MOSFET
JCS4N60V/R/S/B/C/F
MAIN CHARACTERISTICS
Package
ID VDSS Rdson (@Vgs=10V) Qg
z z z UPS
4.0 A 600 V 2.5Ω 27 nC
APPLICATIONS
z High efficiency switch
mode power supplies z Electronic lamp ballasts based on half bridge z UPS FEATURES z Low gate charge z Low Crss (typical 14pF ) z Fast switching z 100% avalanche tested z Improved dv/dt capability z RoHS product
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z z Crss ( 14pF) z z z dv/dt z RoHS
ORDER MESSAGE
Order codes JCS4N60V-O-V-N-B JCS4N60R-O-R-N-B JCS4N60S-O-S-N-B JCS4N60B-O-B-N-B JCS4N60C-O-C-N-B JCS4N60F-O-F-N-B Halogen Free NO NO NO NO NO NO Device Weight 0.35 g(typ) 0.30 g(typ) 1.37 g(typ) 1.71 g(typ) 2.15 g(typ) 2.20 g(typ)
Marking JCS4N60V JCS4N60R JCS4N60S JCS4N60B JCS4N60C JCS4N60F
Package IPAK DPAK TO-263 TO-262 TO-220C TO-220MF
Packaging Tube Tube Tube Tube Tube Tube
:200911A
1/13
Datasheet pdf - http://www.DataSheet4U.co.kr/
JCS4N60V/R/S/B/C/F
ABSOLUTE RATINGS (Tc=25℃)
JCS4N60V/R JCS4N60F Value JCS4N60S/B/C 600 4.0 2.5 4.0* 2.5* Unit V A A
Parameter - Drain-Source Voltage Drain Current
Symbol VDSS ID T=25℃ T=100℃ IDM
-continuous
( 1) Drain Current - pulse (note 1) Gate-Source Voltage ( 2) Single Pulsed Avalanche Energy note 2) ( 1) Avalanche Current (note 1) ( 1) Repetitive Avalanche Current (note 1) ( 3) Peak Diode Recovery dv/dt (note 3)
16
16*
A
VGSS
±30
V
EAS
240
mJ
IAR
4.0
A
EAR
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10.0
mJ
dv/dt
5.5
V/ns
Power Dis...
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