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2N5307

Part Number	2N5307
Manufacturer	Fairchild Semiconductor
Description	NPN Darlington Transistor
Published	Mar 22, 2005
Detailed Description	2N5307 Discrete POWER & Signal Technologies 2N5307 C BE TO-92 NPN Darlington Transistor This device is designed fo...
Datasheet	2N5307 PDF File

Overview

2N5307 Discrete POWER & Signal Technologies 2N5307 C BE TO-92 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.
0 A.
Sourced from Process 05.
See MPSA14 for characteristics.
Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 40 40 12 1.
2 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are b...

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