2N5238

Data Sheet No. 2N5238 Type 2N5238 Geometry 3111 Polarity NPN Qual Level: JAN - JANTXV Features: Silicon power transistor for use in high speed switching applications. Housed in a TO-5 case. Also available in chip form using the 3111 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/394 which Semicoa meets in all cases. Generic Part Number: 2N5238 REF: MIL-PRF-19500/394 TO-5 Maximum Ratings TC = 25oC unless otherwise specified Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Disipation TA = 25 C ambient Derate above 25oC Power Disipation TA = 25oC ambient Derate above 25oC Thermal Impedance Operating Junction Temperature Storage Temperature o Symbol VCEO VCBO VEBO IC PT PT RJC RJA TJ TSTG Rating 170 200 10 10 1.0 5.7 5.0 50 0.020 0.175 -65 to +200 -65 to +200 Unit V V V A mW o mW/ C Watt mW/oC o C/mW o C/mW o C C o Data Sheet No. 2N5238 Electrical Characteristics TC = 25oC unless otherwise specified OFF Characteristics Collector-Base Breakdown Voltage IC = 10 µA Collector-Emitter Breakdown Voltage IC = 0.1 A, pulsed Emitter-Base Breakdown Voltage IE = 10 µA Collector-Emitter Cutoff Current VCE = 160 V VBE = 0.5 V, VCE = 200 V VBE = -0.5 V, VCE = 200 V, TC = +150oC Base-Emitter Cutoff Current VEB = 5 V Collector-Base Cutoff Current VCB = 80 V Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEO1 ICEX ICEX2 IEBO ICBO Min 200 170 7.0 ----------- Max --- Unit V V --10 10 100 0.1 0.1 V µA...