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MT29C Dataheets PDF



Part Number MT29C
Manufacturers Micron Technology
Logo Micron Technology
Description NAND Flash and Mobile LPDRAM
Datasheet MT29C DatasheetMT29C Datasheet (PDF)

Preliminary‡ 152-Ball NAND Flash and Mobile LPDRAM PoP (TI OMAP) MCP Features NAND Flash and Mobile LPDRAM 152-Ball Package-on-Package (PoP) Combination Memory (TI OMAP™) MT29C Family Current production part numbers: See Table 1 on page 3 Features Figure 1: PoP Block Diagram • Micron® NAND Flash and Mobile LPDRAM components • RoHS-compliant, “green” package • Separate NAND Flash and Mobile LPDRAM interfaces • Space-saving package-on-package combination • Low-voltage operation (1.70–1.95V) .

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Preliminary‡ 152-Ball NAND Flash and Mobile LPDRAM PoP (TI OMAP) MCP Features NAND Flash and Mobile LPDRAM 152-Ball Package-on-Package (PoP) Combination Memory (TI OMAP™) MT29C Family Current production part numbers: See Table 1 on page 3 Features Figure 1: PoP Block Diagram • Micron® NAND Flash and Mobile LPDRAM components • RoHS-compliant, “green” package • Separate NAND Flash and Mobile LPDRAM interfaces • Space-saving package-on-package combination • Low-voltage operation (1.70–1.95V) • Industrial temperature range: –40°C to +85°C NAND Flash Power NAND Flash Device NAND Flash Interface NAND Flash-Specific Features • Organization – Page size x8: 2112 bytes (2048 + 64 bytes) x16: 1056 words (1024 + 32 words) – Block size: 64 pages (128K + 4K bytes) LP-DRAM Power www.DataSheet.net/ LP-DRAM Device LP-DRAM Interface Mobile LPDRAM-Specific Features • • • • • • • • No external voltage reference required No minimum clock rate requirement 1.8V LVCMOS-compatible inputs Programmable burst lengths Partial-array self refresh (PASR) Deep power-down (DPD) mode Selectable output drive strength STATUS REGISTER READ (SRR) supported1 Options • LP-DRAM 166 MHz CL32 133 MHz CL3 Marking -6 -75 Notes: 1. Contact factory for remapped SRR output. 2. CL = CAS (READ) latency. PDF: 09005aef8326e5ac / Source: 09005aef8326e59a 152ball_ nand_lpdram_j4xx_omap.fm - Rev. E 4/09 EN 1 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2008 Micron Technology, Inc. All rights reserved. ‡Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by Micron without notice. Products are only warranted by Micron to meet Micron’s production data sheet specifications. Datasheet pdf - http://www.DataSheet4U.co.kr/ Preliminary 152-Ball NAND Flash and Mobile LPDRAM PoP (TI OMAP) MCP Part Numbering Information – 152-Ball PoP Part Numbering Information – 152-Ball PoP Micron NAND Flash and LPDRAM devices are available in different configurations and densities. Figure 2: 152-Ball Part Number Chart MT 29C 1G 24M Micron Technology Product Family 29C = NAND + LPDRAM MCP A C J A CG –x IT ES Production Status Blank = Production ES = Engineering sample MS = Mechanical sample NAND Density 1G = 1Gb 2G = 2Gb 4G = 4Gb Operating Temperature Range IT = Industrial (–40° to +85°C) LPDRAM Self Refresh Current Blank = Standard LPDRAM Density 12M = 512Mb 24M = 1024Mb 48M = 2048Mb LPDRAM Access Time –6 166 MHz CL3 –75 133 MHz CL3 Operating Voltage Range A = 1.8V (1.70–1.95V) Package Codes CA = 152-ball PoP VFBGA (14 x 14 x 0.9mm) CG = 152-ball PoP VFBGA (14 x 14 x 1.0mm) www.DataSheet.net/ NAND Flash Configuration Width Density Generation JQ = 152-ball PoP TFBGA (14 x 14 x 1.1mm) C D J K N P U V x8 x16 x8 x16 x8 x16 x8 x16 1Gb 1Gb 2Gb 2Gb 4Gb 4Gb 1Gb 1Gb First First Second Second First First Second Second Chip Count LPDRAM Configuration Type Width Density Genera.


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