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TGS2306 Dataheets PDF



Part Number TGS2306
Manufacturers TriQuint Semiconductor
Logo TriQuint Semiconductor
Description High Power DC - 18 GHz SPDT FET Switch
Datasheet TGS2306 DatasheetTGS2306 Datasheet (PDF)

Product Data Sheet August 5, 2008 High Power DC - 18GHz SPDT FET Switch • • • • • • • • TGS2306 Key Features and Performance DC - 18 GHz Frequency Range 29 dBm Input P1dB @ VC = -5V > 30 dB Isolation <1 nsec switching speed Control Voltage Application from Either Side of MMIC -3V or -5V Control Voltage 0.5µm pHEMT 3MI Technology Chip Dimensions: 0.83 x 1.11 x 0.10 mm (0.033 x 0.044 x 0.004 inches) Preliminary Measured Performance VC1 = 0V; VC2 = -5V 0 -2 -4 -6 -8 S21 S11 S22 S13 10 Descript.

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Product Data Sheet August 5, 2008 High Power DC - 18GHz SPDT FET Switch • • • • • • • • TGS2306 Key Features and Performance DC - 18 GHz Frequency Range 29 dBm Input P1dB @ VC = -5V > 30 dB Isolation <1 nsec switching speed Control Voltage Application from Either Side of MMIC -3V or -5V Control Voltage 0.5µm pHEMT 3MI Technology Chip Dimensions: 0.83 x 1.11 x 0.10 mm (0.033 x 0.044 x 0.004 inches) Preliminary Measured Performance VC1 = 0V; VC2 = -5V 0 -2 -4 -6 -8 S21 S11 S22 S13 10 Description The TriQuint TGS2306 is a GaAs singlepole, double-throw (SPDT) FET monolithic switch designed to operate over the DC to 18GHz frequency range. This switch not only maintains a high isolation loss and a low insertion loss across a wide bandwidth, but also has very low power consumption and high power handling of 29dBm or greater input P1dB at VC = 5V. These advantages, along with the small size of the chip, make the TGS2306 ideal for use in high-speed radar and communication applications. Isolation, Return Loss (dB) 5 www.DataSheet.net/ Insertion Loss (dB) 0 -5 -10 -15 -20 -25 -30 -35 -40 -10 0 2 4 6 8 10 12 14 Frequency (GHz) 16 18 20 Note: Datasheet is subject to change without notice 1 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com Datasheet pdf - http://www.DataSheet4U.co.kr/ Product Data Sheet August 5, 2008 TABLE I MAXIMUM RATINGS Symbol Parameter Value TGS2306 Notes VC IC PIN PD TCH TM TSTG 1/ 2/ 3/ 4/ Control Voltage Control Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature -7 V 2.25 mA 29 dBm 1.2 W 150 C 320 C -65 to 150 0C 0 0 1/ 2/ 1/ 2/ 1/ 2/ 1/ 2/ 3/ 4/ These ratings represent the maximum operable values for this device Combinations of supply voltage, supply current, input power, and output power shall not exceed PD at a package base temperature of 70°C When operated at this bias condition with a baseplate temperature of 70°C, the MTTF is reduced to 1.0E+6 hours Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. www.DataSheet.net/ TABLE II THERMAL INFORMATION Parameter θJC Thermal Resistance (channel to backside of carrier) Test Conditions RF input =29dBm Insertion Loss ~ 2dB o TBASE = 70 C TCH (oC) 90 θJC (°C/W) 68 TM (HRS) 3.7 E+8 Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70°C baseplate temperature. TABLE III TRUTH TABLE Selected RF Output RF Out 1 RF Out 2 VC1 0V -5 V VC2 -5 V 0V 2 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com Datasheet pdf - http://www.DataSheet4U.co.kr/ Product Data Sheet August 5, 2008 Fixtured Measurement 0.0 -0.5 TGS2306 Insertion Loss (dB) -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 0 0 -5 2 4 6 8 10 www.DataSheet.net/ 12 14 16 18 20 Frequency (GHz) S11 S22 Return Loss (dB) -10 -15 -20 -25 -30 0 2 4 6 8 10 12 14 16 18 20 Frequency (GHz) 3 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com Datasheet pdf - http://www.DataSheet4U.co.kr/ Product Data Sheet August 5, 2008 Fixtured Measurement 0 -5 -10 TGS2306 Isolation (dB) -15 -20 -25 -30 -35 -40 0 0.0 -0.5 2 4 6 8 10 www.DataSheet.net/ 12 14 16 18 20 Frequency (GHz) -35degC +25degC +85degC Insertion Loss (dB) -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 0 2 4 6 8 10 12 14 16 18 20 Frequency (GHz) 4 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com Datasheet pdf - http://www.DataSheet4U.co.kr/ Product Data Sheet August 5, 2008 Switching Speed Measurements Off to On Time=0 50% Control Signal to 90% RF = 480 psec 100 psec/div www.DataSheet.net/ On to Off 50% Control Signal to 10% RF = 320 psec 50 psec/div Measurement performed using a pulse generator with 100 psec rise/fall times driving 50 ohm transmission lines that were terminated in 50 ohms and attached to the VC1 and VC2 control inputs. Pulse generator provided complementary outputs. 5 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com Datasheet pdf - http://www.DataSheet4U.co.kr/ Product Data Sheet August 5, 2008 Mechanical Drawing 1.11 [0.044] .99 [0.039] TGS2306 2 3 4 .55 [0.022] 1 .11 [0.004] .00 [0.000] .00 [0.000] 7 6 5 .11 [0.004] .24 [0.009] .68 [0.027] www.DataSheet.net/ Units: millimeters [inches] Thickness: 0.10 [0.004] (reference only) Chip edge to bond pad dimensions are shown to center of bond pads. Chip size tolerance: ±0.05 [0.002] RF ground through backside Bond Pad #1 Bond Pad #2 Bond Pad #3 Bond Pad #4 Bond Pad #5 Bond Pad #6 Bond Pad #7 RF Input VC1 VC2 RF Output 1 RF .


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