Product Data Sheet
August 5, 2008
High Power DC - 18GHz SPDT FET Switch
• • • • • • • •
TGS2306
Key Features and Performance
DC - 18 GHz Frequency Range 29 dBm Input P1dB @ VC = -5V > 30 dB Isolation <1 nsec switching speed Control Voltage Application from Either Side of MMIC -3V or -5V Control Voltage 0.5µm pHEMT 3MI Technology Chip Dimensions: 0.83 x 1.11 x 0.10 mm (0.033 x 0.044 x 0.004 inches)
Preliminary Measured Performance
VC1 = 0V; VC2 = -5V
0 -2 -4 -6 -8 S21 S11 S22 S13 10
Description
The TriQuint TGS2306 is a GaAs singlepole, double-throw (SPDT) FET monolithic switch designed to operate over the DC to 18GHz frequency range. This switch not only maintains a high isolation loss and a low insertion loss across a wide bandwidth, but also has very low power consumption and high power handling of 29dBm or greater input P1dB at VC = 5V. These advantages, along with the small size of the chip, make the TGS2306 ideal for use in high-speed radar and communication applications.
Isolation, Return Loss (dB)
5
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Insertion Loss (dB)
0 -5 -10 -15 -20 -25 -30 -35 -40
-10 0 2 4 6 8 10 12 14 Frequency (GHz) 16 18 20
Note: Datasheet is subject to change without notice
1
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email:
[email protected] Web: www.triquint.com
Datasheet pdf - http://www.DataSheet4U.co.kr/
Product Data Sheet
August 5, 2008
TABLE I MAXIMUM RATINGS Symbol Parameter Value
TGS2306
Notes
VC IC PIN PD TCH TM TSTG 1/ 2/ 3/ 4/
Control Voltage Control Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature
-7 V 2.25 mA 29 dBm 1.2 W 150 C 320 C -65 to 150 0C
0 0
1/ 2/ 1/ 2/ 1/ 2/ 1/ 2/ 3/ 4/
These ratings represent the maximum operable values for this device Combinations of supply voltage, supply current, input power, and output power shall not exceed PD at a package base temperature of 70°C When operated at this bias condition with a baseplate temperature of 70°C, the MTTF is reduced to 1.0E+6 hours Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
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TABLE II THERMAL INFORMATION Parameter θJC Thermal Resistance (channel to backside of carrier) Test Conditions RF input =29dBm Insertion Loss ~ 2dB o TBASE = 70 C TCH (oC) 90 θJC (°C/W) 68 TM (HRS) 3.7 E+8
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70°C baseplate temperature.
TABLE III TRUTH TABLE Selected RF Output RF Out 1 RF Out 2 VC1 0V -5 V VC2 -5 V 0V
2
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email:
[email protected] Web: www.triquint.com
Datasheet pdf - http://www.DataSheet4U.co.kr/
Product Data Sheet
August 5, 2008
Fixtured Measurement
0.0 -0.5
TGS2306
Insertion Loss (dB)
-1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 0 0 -5 2 4 6 8 10
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12
14
16
18
20
Frequency (GHz)
S11 S22
Return Loss (dB)
-10 -15 -20 -25 -30 0 2 4 6 8 10 12 14 16 18 20
Frequency (GHz)
3
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email:
[email protected] Web: www.triquint.com
Datasheet pdf - http://www.DataSheet4U.co.kr/
Product Data Sheet
August 5, 2008
Fixtured Measurement
0 -5 -10
TGS2306
Isolation (dB)
-15 -20 -25 -30 -35 -40 0 0.0 -0.5 2 4 6 8 10
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12
14
16
18
20
Frequency (GHz)
-35degC +25degC +85degC
Insertion Loss (dB)
-1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 0 2 4 6 8 10 12 14
16
18
20
Frequency (GHz)
4
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email:
[email protected] Web: www.triquint.com
Datasheet pdf - http://www.DataSheet4U.co.kr/
Product Data Sheet
August 5, 2008
Switching Speed Measurements Off to On Time=0 50% Control Signal to 90% RF = 480 psec
100 psec/div
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On to Off 50% Control Signal to 10% RF = 320 psec
50 psec/div
Measurement performed using a pulse generator with 100 psec rise/fall times driving 50 ohm transmission lines that were terminated in 50 ohms and attached to the VC1 and VC2 control inputs. Pulse generator provided complementary outputs.
5
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email:
[email protected] Web: www.triquint.com
Datasheet pdf - http://www.DataSheet4U.co.kr/
Product Data Sheet
August 5, 2008
Mechanical Drawing
1.11 [0.044] .99 [0.039]
TGS2306
2
3
4
.55 [0.022]
1
.11 [0.004] .00 [0.000] .00 [0.000]
7
6
5
.11 [0.004]
.24 [0.009]
.68 [0.027]
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Units: millimeters [inches] Thickness: 0.10 [0.004] (reference only) Chip edge to bond pad dimensions are shown to center of bond pads. Chip size tolerance: ±0.05 [0.002] RF ground through backside Bond Pad #1 Bond Pad #2 Bond Pad #3 Bond Pad #4 Bond Pad #5 Bond Pad #6 Bond Pad #7 RF Input VC1 VC2 RF Output 1 RF .