TGC4406-SM
14 - 17 GHz Packaged Doubler with Amplifier
Key Features
• • • • • • •
RF Output Frequency Range: 28 - 34 GHz Input Frequency Range: 14 - 17 GHz Output Power: 20 dBm Nominal Conversion Gain: 15 dB Nominal Input Frequency Isolation: 25 dBc Bias: Vd = 5 V, Id = 150 mA, Vg = -0.5 V Typical, Vdbl = -0.8 V Fixed, Package Dimensions: 4 x 4 x 0.9 mm
Measured Performance
Bias conditions: Vd = 5 V, Id = 150 mA, Vg = -0.5 V Typical, Vdbl = -0.8 V Fixed
Primary Applications
• •
Point-to-Point Radio Ka Band Satcom
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Product Description
The TriQuint TGC4406-SM packaged MMIC combines a frequency doubler operating at input frequencies of 14 - 17 GHz, with a 3-stage output amplifier. The TGC4406-SM achieves typically 25 dBc input frequency isolation and 20 dBm output power with 5 dBm input power. This performance makes this doubler ideally suited for Point to Point Radios and Ka-Band satellite ground terminal applications. The TGC4406-SM provides the frequency doubling function in an compact 4 mm x 4 mm package footprint. Each device is 100% DC and RF tested on–wafer to ensure performance compliance. Evaluation boards are available upon request. Lead-free and RoHS compliant.
Datasheet subject to change without notice. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504
[email protected] April April2012 2012© ©Rev RevB B
1
Datasheet pdf - http://www.DataSheet4U.co.kr/
Table I Absolute Maximum Ratings 1/
Symbol
Vd-Vg Vd Vdbl Vg Id Ig Idbl Pin 1/ Drain Voltage Doubler Voltage Range Gate Voltage Range Positive Current Gate Current Range Doubler Current Range Input Continuous Wave Power
TGC4406-SM
Notes
2/
Parameter
Drain to Gate Voltage
Value
12 V 8V -2 to 0 V -2 to 0 V 280 mA -1 to 23 mA -0.6 to 16.8 mA 18.2 dBm
2/
2/
These ratings represent the maximum operable values for this device. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device and / or affect device lifetime. These are stress ratings only, and functional operation of the device at these conditions is not implied. Combinations of supply voltage, supply current, input power, and output power shall not exceed the maximum power dissipation listed in Table IV.
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2/
Table II Recommended Operating Conditions
Symbol
Vd Id Id_drive Vg Vdbl 1/ Drain Voltage Quiescent Drain Current Drain Current with RF input = 5 dBm Typical Gate Voltage Fixed Doubler Voltage
Parameter 1/
Value
5V 150 mA 180 mA -0.5 V -0.8 V
See assembly diagram for bias instructions.
2 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504
[email protected] April April2012 2012© ©Rev RevB B
Datasheet pdf - http://www.DataSheet4U.co.kr/
TGC4406-SM
Table III RF Characterization Table
Bias: Vd = 5 V, Id = 150 mA, Vg = -0.5 V Typical, Vdbl = -0.8 V Fixed
SYMBO L
Fin Fout CG CG IRL ORL Pout 1xFin Iso 3xFin Iso
PARAMETER
Input Frequency Range Doubler Output Frequency Range Conversion Gain Conversion Gain Input Return Loss Output Return Loss Output Power (Pin=+5 dBm) Isolation – Fout at 2xFin relative to Fout at 1xFin Isolation - Fout at 2xFin relative to Fout at 3xFin
TEST CONDITIONS
MIN
NOM
14 - 17 28 – 34
UNITS
GHz GHz dB dB dB dB dBm dBc dBc
Fin = 14 - 17 GHz Fout = 28 - 34 GHz Fin = 14.75 - 15 GHz Fout = 29.5 - 30 GHz Fin = 14 - 17 GHz Fout = 28 – 34 GHz Fin = 14 - 17 GHz Fout = 28 – 34 GHz
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15 13 15 6 8 20 25 40
Fin = 14 - 17 GHz Fout = 14 - 17 GHz Fin = 14 - 17 GHz Fout = 42 - 51 GHz
3 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504
[email protected] April April2012 2012© ©Rev RevB B
Datasheet pdf - http://www.DataSheet4U.co.kr/
TGC4406-SM
Table IV Power Dissipation and Thermal Properties
Parameter
Maximum Power Dissipation
Test Conditions
Tbaseplate = 85 °C
Value
Pd = 1.51 W Tchannel = 200 °C θjc = 76 (°C/W) Tchannel = 142 °C Tm = 2.1E+6 Hrs
Thermal Resistance, θjc
Vd = 5 V Id = 150 mA Pd = 0.75 W Tbaseplate = 85 °C Vd = 5 V Id = 180 mA Pout = 20 dBm Pd = 0.80 W Tbaseplate = 85 °C 30 Seconds
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Thermal Resistance, θjc Under RF Drive
θjc = 69 (°C/W) Tchannel = 140 °C Tm = 2.4E+6 Hrs
Mounting Temperature Storage Temperature
320 °C -65 to 150 °C
Median Lifetime (Tm) vs. Channel Temperature
4 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504
[email protected] April April2012 2012© ©Rev RevB B
Datasheet pdf - http://www.DataSheet4U.co.kr/
Measured Data
TGC4406-SM
Bias conditions: Vd = 5 V, Id = 150 mA, Vg = -0.5 V Typical, Vdbl = -0.8 V Fixed
www.DataSheet.net/
5 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504
[email protected] April April2012 2012© ©Rev RevB B
Datasheet pdf - http://www.DataSheet4U.co.kr/
Measured Data
TGC4406-SM
Bias conditions: Vd = 5 V, Id = 150 mA, Vg = -0.5 V Typical, Vdbl = -0.8 V Fixed
www.DataSheet.net/
6 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504
[email protected] April.