Product Data Sheet
March 31, 2003
2.4 mm Discrete HFET
TGF4240-SCC
Key Features and Performance
• • • • • • • 2400 µm ...
Product Data Sheet
March 31, 2003
2.4 mm Discrete HFET
TGF4240-SCC
Key Features and Performance
2400 µm x 0.5 µm HFET Nominal Pout of 31.5 dBm at 8.5 GHz Nominal Gain of 10.0 dB at 8.5 GHz Nominal PAE of 56 % at 8.5 GHz Frequency Range: DC - 12 GHz Suitable for high reliability applications 0.6 x 1.0 x 0.1 mm (0.024 x 0.040 x 0.004 in)
Primary Applications
Cellular Base Stations High-reliability space Military
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DESCRIPTION The TriQuint TGF4240-SCC is a single gate 2.4 mm Discrete GaAs Heterostructure Field Effect
Transistor (HFET) designed for high-efficiency power applications up to 12 GHz in Class A and Class AB operation. Typical performance at 8.5 GHz is 31.5 dBm power output, 10 dB Gain, and 56% PAE. Bond-pad and backside metalization is gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire-bonding processes. The TGF4240-SCC is readily assembled using automatic equipment.
TriQuint Semiconductor Texas : (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet
March 31, 2003
TGF4240-SCC
TABLE I MAXIMUM RATINGS SYMBOL
VDS VGS PD TCH TSTG TM
PARAMETER 1/
Drain to Source Voltage Gate to Source Voltage Range Power Dissipation Operating Channel Temperature Storage Temperature Mounting Temperature (30 seconds)
VALUE
12 V 0 to -5.0 Volts TBD 150°C -65 to 200°C 320°C
NOTES
2/ 3/, 4/
1/ These ratings represe...
