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TGA4510 Dataheets PDF



Part Number TGA4510
Manufacturers TriQuint Semiconductor
Logo TriQuint Semiconductor
Description 29-37 GHz Compact Driver Amplifier
Datasheet TGA4510 DatasheetTGA4510 Datasheet (PDF)

Product Data Sheet August 5, 2008 29-37 GHz Compact Driver Amplifier Key Features • • • • • TGA4510 0.25 um pHEMT Technology >16 dB Nominal Gain @ 30 GHz 16 dBm Nominal Psat Bias Conditions: Vd = 6V, Id = 60 mA Compact Chip Size: 1.1 x 0.8 x 0.1 mm3 Primary Applications • LMDS Point-to-Point Base Stations Fixtured Measured Performance Bias Conditions: Vd = 6V, Id = 60 mA ± 5% 20 18 16 14 Gain (dB) 12 www.DataSheet.net/ • • 10 8 6 4 2 0 26 28 30 32 34 Frequency (GHz) 36 38 40 20 18 16 14 .

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Product Data Sheet August 5, 2008 29-37 GHz Compact Driver Amplifier Key Features • • • • • TGA4510 0.25 um pHEMT Technology >16 dB Nominal Gain @ 30 GHz 16 dBm Nominal Psat Bias Conditions: Vd = 6V, Id = 60 mA Compact Chip Size: 1.1 x 0.8 x 0.1 mm3 Primary Applications • LMDS Point-to-Point Base Stations Fixtured Measured Performance Bias Conditions: Vd = 6V, Id = 60 mA ± 5% 20 18 16 14 Gain (dB) 12 www.DataSheet.net/ • • 10 8 6 4 2 0 26 28 30 32 34 Frequency (GHz) 36 38 40 20 18 16 14 Pout (dBm) 12 10 8 6 4 2 0 26 28 30 , Pwr(in) 4 2 0 -2 -4 -6 -8 -10 32 34 Frequency (GHz) 36 38 40 Note: Datasheet is subject to change without notice. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 1 Datasheet pdf - http://www.DataSheet4U.co.kr/ Product Data Sheet August 5, 2008 TGA4510 TABLE I MAXIMUM RATINGS 1/ Symbol Parameter V+ Positive Supply Voltage + I Positive Supply Current (Quiescent) |IG| Gate Current PD Power Dissipation PIN Input Continuous Wave Power TCH Operating Channel Temperature TM Mounting Temperature (30 seconds) TSTG Storage Temperature Value 8V 81mA 3.5 mA TBD 18 dBm 150 °C 320 °C -65 °C to 150 °C Notes 2/ 3/, 4/ 1/ 2/ 3/ 4/ These values represent the maximum operable values of this device Total current for the entire MMIC These ratings apply to each individual FET Junction operating temperature will directly affect the device mean time to failure (MTTF). For maximum life it is recommended that junction temperatures be maintained at the lowest possible levels. www.DataSheet.net/ TABLE II ELECTRICAL CHARACTERISTICS (Ta = 25oC ± 5oC) Parameter Frequency Band Drain Operating Voltage Gate Operating Voltage Drain Current Typical DC Power Consumption Small Signal Gain Gain Flatness Input Return Loss Output Return Loss TOI (Single Tone Power) @ 30 GHz CW Output Power @ P1dB (dBm) Units GHz V V mA W dB dB dB dB dBm dBm Typical 29 - 37 6 -0.6 60 0.36 15.8 – 17.6 < 0.05 >8 > 11 22 14.0 – 16.2 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 2 Datasheet pdf - http://www.DataSheet4U.co.kr/ Product Data Sheet August 5, 2008 TGA4510 Measured Fixtured Data 20 18 16 14 Gain (dB) 12 10 8 6 4 2 0 26 28 30 32 34 Frequency (GHz) www.DataSheet.net/ Bias Conditions: Vd = 6V, Id = 60mA ± 5% 36 38 40 20 18 16 14 Pout (dBm) 12 10 8 6 4 2 0 26 28 30 , Pwr(in) 4 2 0 -2 -4 -6 -8 -10 32 34 Frequency (GHz) 36 38 40 Note: Pwr (in) = 0dBm is approximately P1dB (dbM) TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 3 Datasheet pdf - http://www.DataSheet4U.co.kr/ Product Data Sheet August 5, 2008 TGA4510 Measured Fixtured Data Bias Conditions: Vd = 6V, Id = 60mA ± 5% 0 -2 Input Return Loss (dB) -4 -6 -8 -10 -12 -14 -16 26 28 30 32 34 36 38 40 Frequency (GHz) www.DataSheet.net/ 0 -2 Output Return Loss (dB) -4 -6 -8 -10 -12 -14 -16 -18 -20 26 28 30 32 34 36 38 40 Frequency (GHz) TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 4 Datasheet pdf - http://www.DataSheet4U.co.kr/ Product Data Sheet August 5, 2008 TGA4510 Measured Fixtured Data Bias Conditions: Vd = 6V, Id = 60 mA ± 5%, @ 30 GHz 20 18 100 95 90 85 Gain (dB),Pout (dBm) 16 14 12 10 8 6 4 2 0 -10 -8 -6 -4 -2 0 Gain Pout Id 75 70 65 60 55 50 4 Pin (dBm) www.DataSheet.net/ 2 20 18 Bias Conditions: Vd = 6V, Id = 60 mA ± 5%, @ 36 GHz 100 95 90 85 Gain (dB),Pout (dBm) 16 14 12 10 8 6 4 2 0 -10 -8 -6 -4 -2 0 Gain Pout Id 75 70 65 60 55 50 4 Pin (dBm) 2 Id (mA) 5 Datasheet pdf - http://www.DataSheet4U.co.kr/ 80 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com Id (mA) 80 Product Data Sheet August 5, 2008 TGA4510 Measured Fixtured Data 30 20 10 0 Bias Conditions: Vd = 6V, Id = 60 mA ± 5%, @ 30 GHz TOI, Fund/Tone, OIP3/Tone (dBm) -10 -20 -30 -40 -50 -60 -70 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 TOI Fund IMD3 Pin (dBm/tone) www.DataSheet.net/ Bias Conditions: Vd = 6V, Id = 60 mA ± 5%, @ Pin = -10dBm/Tone 30 25 TOI (dBm), Gain (dB) 20 15 10 5 0 26 28 30 32 34 36 38 40 TOI Gain Frequency (GHz) TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 6 Datasheet pdf - http://www.DataSheet4U.co.kr/ Product Data Sheet August 5, 2008 TGA4510 Chip Assembly and Bonding Diagram VG RF In RF Out www.DataSheet.net/ VD GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 7 Datasheet pdf - http://www.DataSheet4U.co.kr/ Product Data Sheet August 5, 2008 TGA4510 Mechanical Drawing www.DataSheet.net/ GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas: Phone (972)994.


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