Document
Product Data Sheet
August 5, 2008
29-37 GHz Compact Driver Amplifier
Key Features
• • • • •
TGA4510
0.25 um pHEMT Technology >16 dB Nominal Gain @ 30 GHz 16 dBm Nominal Psat Bias Conditions: Vd = 6V, Id = 60 mA Compact Chip Size: 1.1 x 0.8 x 0.1 mm3
Primary Applications
• LMDS Point-to-Point Base Stations
Fixtured Measured Performance
Bias Conditions: Vd = 6V, Id = 60 mA ± 5%
20 18 16 14 Gain (dB) 12
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• •
10 8 6 4 2 0 26 28 30 32 34 Frequency (GHz) 36 38 40
20 18 16 14 Pout (dBm) 12 10 8 6 4 2 0 26 28 30
,
Pwr(in) 4 2 0 -2 -4 -6 -8 -10
32 34 Frequency (GHz)
36
38
40
Note: Datasheet is subject to change without notice.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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Product Data Sheet
August 5, 2008 TGA4510
TABLE I MAXIMUM RATINGS 1/ Symbol Parameter V+ Positive Supply Voltage + I Positive Supply Current (Quiescent) |IG| Gate Current PD Power Dissipation PIN Input Continuous Wave Power TCH Operating Channel Temperature TM Mounting Temperature (30 seconds) TSTG Storage Temperature Value 8V 81mA 3.5 mA TBD 18 dBm 150 °C 320 °C -65 °C to 150 °C Notes 2/
3/, 4/
1/ 2/ 3/ 4/
These values represent the maximum operable values of this device Total current for the entire MMIC These ratings apply to each individual FET Junction operating temperature will directly affect the device mean time to failure (MTTF). For maximum life it is recommended that junction temperatures be maintained at the lowest possible levels.
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TABLE II ELECTRICAL CHARACTERISTICS (Ta = 25oC ± 5oC)
Parameter Frequency Band Drain Operating Voltage Gate Operating Voltage Drain Current Typical DC Power Consumption Small Signal Gain Gain Flatness Input Return Loss Output Return Loss TOI (Single Tone Power) @ 30 GHz CW Output Power @ P1dB (dBm) Units GHz V V mA W dB dB dB dB dBm dBm Typical 29 - 37 6 -0.6 60 0.36 15.8 – 17.6 < 0.05 >8 > 11 22 14.0 – 16.2
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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Product Data Sheet
August 5, 2008 TGA4510
Measured Fixtured Data
20 18 16 14 Gain (dB) 12 10 8 6 4 2 0 26 28 30 32 34 Frequency (GHz)
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Bias Conditions: Vd = 6V, Id = 60mA ± 5%
36
38
40
20 18 16 14 Pout (dBm) 12 10 8 6 4 2 0 26 28 30
,
Pwr(in) 4 2 0 -2 -4 -6 -8 -10
32 34 Frequency (GHz)
36
38
40
Note: Pwr (in) = 0dBm is approximately P1dB (dbM)
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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Datasheet pdf - http://www.DataSheet4U.co.kr/
Product Data Sheet
August 5, 2008 TGA4510
Measured Fixtured Data
Bias Conditions: Vd = 6V, Id = 60mA ± 5%
0 -2
Input Return Loss (dB)
-4 -6 -8 -10 -12 -14 -16 26 28 30 32 34 36 38 40
Frequency (GHz)
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0 -2
Output Return Loss (dB)
-4 -6 -8
-10 -12 -14 -16 -18 -20 26 28 30 32 34 36 38 40
Frequency (GHz)
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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Datasheet pdf - http://www.DataSheet4U.co.kr/
Product Data Sheet
August 5, 2008 TGA4510
Measured Fixtured Data
Bias Conditions: Vd = 6V, Id = 60 mA ± 5%, @ 30 GHz
20 18 100 95 90 85
Gain (dB),Pout (dBm)
16 14 12 10 8 6 4 2 0 -10 -8 -6 -4 -2 0
Gain Pout Id
75 70 65 60 55 50 4
Pin (dBm)
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2
20 18
Bias Conditions: Vd = 6V, Id = 60 mA ± 5%, @ 36 GHz
100 95 90 85
Gain (dB),Pout (dBm)
16 14 12 10 8 6 4 2 0 -10 -8 -6 -4 -2 0
Gain Pout Id
75 70 65 60 55 50 4
Pin (dBm)
2
Id (mA)
5
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80
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Id (mA)
80
Product Data Sheet
August 5, 2008 TGA4510
Measured Fixtured Data
30 20 10 0
Bias Conditions: Vd = 6V, Id = 60 mA ± 5%, @ 30 GHz
TOI, Fund/Tone, OIP3/Tone (dBm)
-10 -20 -30 -40 -50 -60 -70 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 TOI Fund IMD3
Pin (dBm/tone)
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Bias Conditions: Vd = 6V, Id = 60 mA ± 5%, @ Pin = -10dBm/Tone
30 25
TOI (dBm), Gain (dB)
20 15 10 5 0 26 28 30 32 34 36 38 40 TOI Gain
Frequency (GHz)
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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Product Data Sheet
August 5, 2008 TGA4510
Chip Assembly and Bonding Diagram
VG
RF In
RF Out
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VD
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
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Datasheet pdf - http://www.DataSheet4U.co.kr/
Product Data Sheet
August 5, 2008 TGA4510
Mechanical Drawing
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GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
TriQuint Semiconductor Texas: Phone (972)994.