DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
2N5087 PNP general purpose transistor
Product specification S...
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
2N5087
PNP general purpose
transistor
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 02
Philips Semiconductors
Product specification
PNP general purpose
transistor
FEATURES Low current (max. 100 mA) Low voltage (max. 50 V). APPLICATIONS Low noise stages in audio equipment. DESCRIPTION
PNP transistor in a TO-92; SOT54 plastic package
NPN complement: 2N5088.
1 handbook, halfpage
2N5087
PINNING PIN 1 2 3 collector base emitter DESCRIPTION
2 3
1 2 3
MAM280
Fig.1
Simplified outline (TO-92; SOT54) and symbol.
QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain transition frequency Tamb ≤ 25 °C IC = −1 mA; VCE = −5 V IC = −500 µA; VCE = −5 V; f = 100 MHz open emitter open base CONDITIONS − − − − 250 40 MIN. MAX. −50 −50 −200 500 − − MHz V V mA mW UNIT
1997 Jul 02
2
Philips Semiconductors
Product specification
PNP general purpose
transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1.
Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off ...