2N5087

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5087 PNP general purpose transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 02 Philips Semiconductors Product specification PNP general purpose transistor FEATURES Low current (max. 100 mA) Low voltage (max. 50 V). APPLICATIONS Low noise stages in audio equipment. DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package NPN complement: 2N5088. 1 handbook, halfpage 2N5087 PINNING PIN 1 2 3 collector base emitter DESCRIPTION 2 3 1 2 3 MAM280 Fig.1 Simplified outline (TO-92; SOT54) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE fT PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain transition frequency Tamb ≤ 25 °C IC = −1 mA; VCE = −5 V IC = −500 µA; VCE = −5 V; f = 100 MHz open emitter open base CONDITIONS − − − − 250 40 MIN. MAX. −50 −50 −200 500 − − MHz V V mA mW UNIT 1997 Jul 02 2 Philips Semiconductors Product specification PNP general purpose transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off ...