TGF2021-04-SD

TGF2021-04-SD DC-4 GHz Packaged Power pHEMT Key Features Frequency Range: DC-4 GHz Package Dimensions: 4.5 x 4 x 1.5 mm Nominal 900 MHz Low Noise Application Board Performance: OTOI: 39.5 dBm Noise Figure: 0.6dB Gain: 16dB P1dB: 26.5dBm Input Return Loss: -8 dB Output Return Loss: -18 dB Bias: Vd = 5 V, Id = 150 mA, Vg = -0.8 V (Typical) 900 MHz Low Noise Application Board Performance Bias conditions: Vd = 5 V, Idq = 150 mA, Vg = -0.8 V Typical Primary Applications Cellular Base Stations WiMAX Wireless Infrastructure Low Noise Amplifiers www.DataSheet.net/ Product Description The TGF2021-04-SD is a high performance pseudomorphic High Electron Mobility GaAs Transistor (pHEMT) housed in a low cost SOT89 surface mount package. The device’s ideal operating point for low noise operation is at a drain bias of 5 V and 150 mA. At this bias at 900 MHz when matched into 50 ohms using external components, this device is capable of 16 dB gain, 0.6dB noise figure, and 39.5 dBm output IP3. The combination of high gain, low noise, and excellent linearity makes this an ideal component for use in a 3G or 4G receive chain. Evaluation boards at 900 MHz are available. RoHS and Lead-Free compliant 1 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2012 © Rev C Datasheet pdf - http://www.DataSheet4U.co.kr/ TGF2021-04-SD Table I Absolute Maximum Ratings 1/ Symbol Vd-Vg Vd Vg Id |Ig| Tch Pin Drain Voltage Gate Voltage Rang...