PSMN9R8-30MLC

PA K PSMN9R8-30MLC N-channel 30 V 9.8 mΩ logic level MOSFET in LFPAK33 using NextPower Technology Rev. 3 — 15 June 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. LF 33 1.2 Features and benefits  Low parasitic inductance and resistance  Optimised for 4.5V Gate drive utilising NextPower Superjunction technology  Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads 1.3 Applications  DC-to-DC converters  Load switching w w w . D a t a S h e e t . n e t /  Synchronous buck regulator 1.4 Quick reference data Table 1. Symbol VDS ID Ptot Tj RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation junction temperature drain-source on-state resistance VGS = 4.5 V; ID = 15 A; Tj = 25 °C; see Figure 10 VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 10 Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge VGS = 4.5 V; ID = 15 A; VDS = 15 V; see Figure 12; see Figure 13 VGS = 4.5 V; ID = 15 A; VDS = 15 V; see Figure 12; see Figure 13 1.5 5 nC nC Conditions Tj = 25 °C Tmb = 25 °C; VGS = 10 V; see Figure 1 Tmb = 25 °C; see Figure 2 Min -55 Typ 10.65 8.5 Max 30 50 45 175 12.4 9.8 Unit V A W °C mΩ mΩ Static characteristics D a t a s h e e t NXP Semiconductors PSMN9R8-30MLC N-channel 30 V 9...