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FGD3440G2_F085 Dataheets PDF



Part Number FGD3440G2_F085
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel Ignition IGBT
Datasheet FGD3440G2_F085 DatasheetFGD3440G2_F085 Datasheet (PDF)

FGD3440G2_F085 EcoSPARK®2 335mJ, 400V, N-Channel Ignition IGBT December 2011 FGD3440G2_F085 EcoSPARK®2 335mJ, 400V, N-Channel Ignition IGBT Features „ SCIS Energy = 335mJ at TJ = 25oC „ Logic Level Gate Drive „ Qualified to AEC Q101 „ RoHS Compliant Applications „ Automotive lgnition Coil Driver Circuits „ Coil On Plug Applications www.DataSheet.co.kr Package GATE EMITTER COLLECTOR JEDEC TO-252 D-Pak @2011 Fairchild Semiconductor Corporation FGD3440G2_F085 Rev. B 1 www.fairchildsemi.co.

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FGD3440G2_F085 EcoSPARK®2 335mJ, 400V, N-Channel Ignition IGBT December 2011 FGD3440G2_F085 EcoSPARK®2 335mJ, 400V, N-Channel Ignition IGBT Features „ SCIS Energy = 335mJ at TJ = 25oC „ Logic Level Gate Drive „ Qualified to AEC Q101 „ RoHS Compliant Applications „ Automotive lgnition Coil Driver Circuits „ Coil On Plug Applications www.DataSheet.co.kr Package GATE EMITTER COLLECTOR JEDEC TO-252 D-Pak @2011 Fairchild Semiconductor Corporation FGD3440G2_F085 Rev. B 1 www.fairchildsemi.com Datasheet pdf - http://www.DataSheet4U.net/ FGD3440G2_F085 EcoSPARK®2 335mJ, 400V, N-Channel Ignition IGBT Device Maximum Ratings TA = 25°C unless otherwise noted Parameter Symbol BVCER Collector to Emitter Breakdown Voltage (IC = 1mA) BVECS ESCIS25 IC25 IC110 VGEM PD TJ TSTG TL TPKG ESD Emitter to Collector Voltage - Reverse Battery Condition (IC = 10mA) Self Clamping Inductive Switching Energy (Note 1) Collector Current Continuous, at VGE = 4.0V, TC = 25°C Collector Current Continuous, at VGE = 4.0V, TC = 110°C Gate to Emitter Voltage Continuous Power Dissipation Total, at TC = 25°C Power Dissipation Derating, for TC > 25oC Ratings 400 28 335 195 26.9 25 ±10 166 1.1 -40 to +175 -40 to +175 300 260 4 Units V V mJ mJ A A V W W/oC o o o o ESCIS150 Self Clamping Inductive Switching Energy (Note 2) Operating Junction Temperature Range Storage Junction Temperature Range Max. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s) Max. Lead Temp. for Soldering (Package Body for 10s) Electrostatic Discharge Voltage at100pF, 1500Ω C C C C kV Package Marking and Ordering Information Device Marking FGD3440G2 Device FGD3440G2_F085 Package TO252 Reel Size 330mm Tape Width 16mm Quantity 2500 units Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics BVCER ICE = 2mA, VGE = 0, Collector to Emitter Breakdown Voltage RGE = 1KΩ, TJ = -40 to 150oC www.DataSheet.co.kr 370 400 430 V BVCES BVECS BVGES ICER IECS R1 R2 ICE = 10mA, VGE = 0V, Collector to Emitter Breakdown Voltage RGE = 0, TJ = -40 to 150oC Emitter to Collector Breakdown Voltage Gate to Emitter Breakdown Voltage Collector to Emitter Leakage Current Emitter to Collector Leakage Current Series Gate Resistance Gate to Emitter Resistance ICE = -20mA, VGE = 0V, TJ = 25°C IGES = ±2mA VCE = 250V, RGE=1KΩ VEC = 24V, TJ = 25oC 390 28 ±12 10K TJ = 150oC TJ = 25oC TJ = 150oC 420 ±14 120 - 450 25 1 1 40 30K V V V μA mA mA Ω Ω On State Characteristics VCE(SAT) Collector to Emitter Saturation Voltage ICE = 6A, VGE = 4V, VCE(SAT) Collector to Emitter Saturation Voltage ICE = 10A, VGE = 4.5V, VCE(SAT) Collector to Emitter Saturation Voltage ICE = 15A, VGE = 4.5V, L = 3.0 mHy, VGE = 5V Self Clamped Inductive Switching ESCIS RG = 1KΩ, (Note 1) TJ = 150oC TJ = 150oC o TJ = 25oC - 1.1 1.3 1.6 - 1.2 1.45 1.75 335 V V V mJ TJ = 25 C @2011 Fairchild Semiconductor Corporation FGD3440G2_F085 Rev. B 2 www.fairchildsemi.co.


STV8238 FGD3440G2_F085 FP0030


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