Document
FGD3440G2_F085 EcoSPARK®2 335mJ, 400V, N-Channel Ignition IGBT
December 2011
FGD3440G2_F085
EcoSPARK®2 335mJ, 400V, N-Channel Ignition IGBT
Features
SCIS Energy = 335mJ at TJ = 25oC Logic Level Gate Drive Qualified to AEC Q101 RoHS Compliant
Applications
Automotive lgnition Coil Driver Circuits Coil On Plug Applications
www.DataSheet.co.kr
Package
GATE
EMITTER
COLLECTOR
JEDEC TO-252 D-Pak
@2011 Fairchild Semiconductor Corporation FGD3440G2_F085 Rev. B
1
www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.net/
FGD3440G2_F085 EcoSPARK®2 335mJ, 400V, N-Channel Ignition IGBT
Device Maximum Ratings TA = 25°C unless otherwise noted
Parameter Symbol BVCER Collector to Emitter Breakdown Voltage (IC = 1mA) BVECS ESCIS25 IC25 IC110 VGEM PD TJ TSTG TL TPKG ESD Emitter to Collector Voltage - Reverse Battery Condition (IC = 10mA) Self Clamping Inductive Switching Energy (Note 1) Collector Current Continuous, at VGE = 4.0V, TC = 25°C Collector Current Continuous, at VGE = 4.0V, TC = 110°C Gate to Emitter Voltage Continuous Power Dissipation Total, at TC = 25°C Power Dissipation Derating, for TC > 25oC Ratings 400 28 335 195 26.9 25 ±10 166 1.1 -40 to +175 -40 to +175 300 260 4 Units V V mJ mJ A A V W W/oC
o o o o
ESCIS150 Self Clamping Inductive Switching Energy (Note 2)
Operating Junction Temperature Range Storage Junction Temperature Range Max. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s) Max. Lead Temp. for Soldering (Package Body for 10s) Electrostatic Discharge Voltage at100pF, 1500Ω
C C C C
kV
Package Marking and Ordering Information
Device Marking FGD3440G2 Device FGD3440G2_F085 Package TO252 Reel Size 330mm Tape Width 16mm Quantity 2500 units
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off State Characteristics
BVCER ICE = 2mA, VGE = 0, Collector to Emitter Breakdown Voltage RGE = 1KΩ, TJ = -40 to 150oC
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370
400
430
V
BVCES BVECS BVGES ICER IECS R1 R2
ICE = 10mA, VGE = 0V, Collector to Emitter Breakdown Voltage RGE = 0, TJ = -40 to 150oC Emitter to Collector Breakdown Voltage Gate to Emitter Breakdown Voltage Collector to Emitter Leakage Current Emitter to Collector Leakage Current Series Gate Resistance Gate to Emitter Resistance ICE = -20mA, VGE = 0V, TJ = 25°C IGES = ±2mA VCE = 250V, RGE=1KΩ VEC = 24V, TJ = 25oC
390 28 ±12 10K TJ = 150oC TJ = 25oC TJ = 150oC
420 ±14 120 -
450 25 1 1 40 30K
V V V μA mA mA Ω Ω
On State Characteristics
VCE(SAT) Collector to Emitter Saturation Voltage ICE = 6A, VGE = 4V, VCE(SAT) Collector to Emitter Saturation Voltage ICE = 10A, VGE = 4.5V, VCE(SAT) Collector to Emitter Saturation Voltage ICE = 15A, VGE = 4.5V, L = 3.0 mHy, VGE = 5V Self Clamped Inductive Switching ESCIS RG = 1KΩ, (Note 1) TJ = 150oC TJ = 150oC
o
TJ = 25oC
-
1.1 1.3 1.6 -
1.2 1.45 1.75 335
V V V mJ
TJ = 25 C
@2011 Fairchild Semiconductor Corporation FGD3440G2_F085 Rev. B
2
www.fairchildsemi.co.