AM7510C

Analog Power AM7510C N & P-Channel 100-V (D-S) MOSFET VDS (V) Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits 100 -100 PRODUCT SUMMARY rDS(on) (mΩ) 62 @ VGS = 10V 72 @ VGS = 5.5V 275 @ VGS = -10V 295 @ VGS = -4.5V ID(A) 4.8 4.4 -2.5 -2.4 DFN5x6-8L ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Nch Limit Pch Limit VDS Drain-Source Voltage 100 -100 VGS Gate-Source Voltage ±20 ±20 TA=25°C 4.8 -2.5 ID Continuous Drain Current a TA=70°C 3.7 -2 IDM Pulsed Drain Current b 20 -15 IS 3 -2.7 Continuous Source Current (Diode Conduction) a T =25°C 2.1 2.1 A PD Power Dissipation a TA=70°C 1.3 1.3 TJ, Tstg -55 to 150 Operating Junction and Storage Temperature Range www.DataSheet.co.kr Units V A A W °C Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum 62.5 RθJA 110 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM7510C_1A Datasheet pdf - http://www.DataSheet4U.net/ Analog Power Electrical Characteristics Parameter Symbol Test Conditions Static VDS = VGS, ID = 250 uA (N-ch) VDS = VGS, ID = -250 uA (P-ch) VDS = 0 V, VGS = ±20 V VDS = 80 V, VGS = 0 V (N-ch) VDS = -80 V, VGS = 0 V (P-ch) VDS = 5 V, VGS = 10 V (N-ch) VDS = -5 V, ...