AM7101P

Analog Power P-Channel 100-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe DFN3x3-8PP saves board space Fast switching speed High performance trench technology AM7101P PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 269 @ VGS = -10V -100 289 @ VGS = -5.5V DFN3x3-8PP Top View ID (A) -3 -2.9 S S S S G 1 2 3 4 8 7 6 5 D D D D G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Maximum Units Drain-Source Voltage VDS -100 V ±20 Gate-Source Voltage VGS www.DataSheet.co.kr o Continuous Drain Current Pulsed Drain Current b a TA=25 C TA=70 C o o ID IDM -3 -2.5 ±50 -2.1 3.5 2.0 A W o A Continuous Source Current (Diode Conduction) Power Dissipation a a IS TA=25 C TA=70 C o o PD Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 C T H ERMA L RE SIST A NC E RA T ING S P aram eter M axim umJunction-to-Am bient a Sym bol RθJA t <= 10 sec Steady State Maxim um U nits o 35 C/W 81 o C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PRELIMINARY...