AM2391P

Analog Power AM2391P P-Channel 150-V (D-S) MOSFET Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost converters PRODUCT SUMMARY rDS(on) (Ω) 1.2 @ VGS = -10V 1.3 @ VGS = -4.5V VDS (V) -150 ID(A) -0.9 -0.8 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage -150 VGS Gate-Source Voltage ±20 TA=25°C -0.9 ID Continuous Drain Current a TA=70°C -0.8 b IDM Pulsed Drain Current 5 a I 1.5 Continuous Source Current (Diode Conduction) S T =25°C 1.3 A PD Power Dissipation a TA=70°C 0.8 TJ, Tstg -55 to 150 Operating Junction and Storage Temperature Range www.DataSheet.co.kr Units V A A W °C Maximum Junction-to-Ambient a THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State Symbol Maximum 100 RθJA 166 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature © Preliminary 1 Publication Order Number: DS_AM2391P_1A Datasheet pdf - http://www.DataSheet4U.net/ Analog Power AM2391P Parameter Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Input Capacitance Output ...