AM2305

AiT Semiconductor Inc. www.ait-ic.com MOSFET -30V P-CHANNEL ENHANCEMENT MODE AM2305 DESCRIPTION The AM2305 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This high density process is especially tailored to minimize on-state resistance. FEATURES     -30V/-4A, RDS(ON) = 55mΩ@VGS = -10V -30V/-3A, RDS(ON) = 64mΩ@VGS = -4.5V -30V/-2A, RDS(ON) = 85mΩ@VGS = -2.5V Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and Maximum DC current capability  Available in a SOT-23 package. These devices are particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package. AM2305 is available in a SOT-23 package. APPLICATION    High Frequency Point-of-Load Synchronous New working DC-DC Power System Load Switch ORDERING INFORMATION www.DataSheet.co.kr P CHANNEL MOSFET Package Type SOT-23 Note E3 Part Number AM2305E3R AM2305E3VR R: Tape & Reel V: Green Package AiT provides all Pb free products Suffix “ V “ means Green Package REV1.0 - NOV 2010 RELEASED – -1- Datasheet pdf - http://www.DataSheet4U.net/ AiT Semiconductor Inc. www.ait-ic.com MOSFET -30V P-CHANNEL ENHANCEMENT MODE AM2305 PIN DESCRIPTION Top View Pin # 1 2 3 Symbol G S D www.DataSheet.co.kr Function Gate Source Drain REV1.0 - NOV 2010 RELEASED – -2- Datasheet pdf - http://www.DataSheet4U...