AM1433PE

Analog Power P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SC70-6 saves board space Fast switching speed High performance trench technology ESD AM1433PE PRODUCT SUMMARY VDS (V) rDS(on) (OHM) 0.064 @ VGS = -10V -30 0.096 @ VGS = -4.5V SC70-6 Top View G D D G 1 2 3 6 5 4 D D S S ID (A) -4.1 -3.3 D P-Channel MOSFET Protected ABSOLUTE MAXIMUM RATINGS (T A = 25 oC UNLESS OTHERWISE NOTED) Parameter Symbol Maximum Units VDS Drain-Source Voltage -30 V ±20 Gate-Source Voltage VGS www.DataSheet.co.kr Continuous Drain Current Pulsed Drain Current b a TA=25 C TA=70 C o o ID IDM -4.1 -3.3 -10 ±1.4 1.56 0.81 A W o A Continuous Source Current (Diode Conduction) Power Dissipation a a IS TA=25 C TA=70 C o o PD Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 C THERM A L RESISTA NCE RA TING S Param eter M axim umJunction-to-Am bient a Sym bol t <= 5 sec Steady-State RTHJA Maxim um 80 125 Units o C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publicatio...