FLL21E180IU

FLL21E180IU High Voltage - High Power GaAs FET FEATURES E High Voltage Operation : VDS=28V E High Gain: 15.0dB(typ.) at Pout=46dBm(Avg.) E Broad Frequency Range : 2100 to 2200MHz E Proven Reliability DESCRIPTION The FLL21E180IU is a high power GaAs FET that offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers. This device is target for high voltage, low current operation in digitally modulated base station. This product is ideally suited for W-CDMA base station amplifiers while offering high gain long term reliability and ease for use. ABSOLUTE MAXIMUM RATINGS Item Symbol Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature VDS VGS Pt T stg Tch Condition Tc=25 oC Rating 32 -3 230 -65 to +175 200 Unit V V W oC oC RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25 oC) Item DC Input Voltage Forward Gate Current Reverse Gate Current Channel Temperature Symbol VDS I GF IGR T ch Condition RG=1 Ω RG =1 Ω w w w D .a a tS h e e c . to k .r Limit <28 <705 >-64 155 Unit V mA mA oC ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 o C) Item Symbol Condition min. Pinch-Off Voltage Gate-Source Breakdown Voltage 3rd Order Inter modulation Distortion Power Gain Drain Efficiency Adjacent Channel Leakage Power Ratio Thermal Resistance Vp VGSO IM3 Gp ηd ACLR Rth VDS=5V I DS=150mA IGS=-1.5mA VDS=28V I DS(DC) =1.7A Pout=46dBm(Avg.) note Channel to Case -0.1 -5 14....