FLL21E090IY

FLL21E090IY L,S-band High Power GaAs FET FEATURES ・High Voltage Operation (VDS=28V) GaAs FET ・High Gain: 15.5dB(typ.) at Pout=43dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・High Reliability DESCRIPTION The FLL21E090IY is a high power GaAs FET that offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers. This device is targeted for high voltage, low current operation in digitally modulated base station amplifiers. This product is ideally suited for W-CDMA and Multi-carrier PCS base station amplifiers while offering high gain, long term reliability and ease of use. ABSOLUTE MAXIMUM RATING Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT T stg T ch Condition T C=25 C (Case Tem perature) o Rating 32 -3 134 65 to +175 200 o Unit V V W o C o C - RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25 C) Item DC Input Voltage Forward Gate Current Reverse Gate Current Channel Temperature Symbol VDS IGF IGR T ch www.DataSheet.co.kr Condition RG=2Ω RG=2Ω Limit <28 <352 >-31 155 Unit V mA mA o C ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 C) Item Pinch-Off Voltage Gate-Source Breakdown Voltage 3rd Order Intermodulation Distortion Power Gain Drain Efficiency Adjacent Channel Leakage Power Ratio Themal Resistance Note 1 : IM3, ACLR and Gain test conditions as follows IM3 & Gain : f 0=2.1325GHz, f 1=2.1475GHz W-CDMA(3GPP3.4 12...