FLL21E004ME

FLL21E004ME FEATURES ・High Voltage Operation : VDS=28V ・High Power : P1dB=36dBm(typ.) at f=2.17GHz ・High Gain: G1dB=14dB(typ.) at f=2.17GHz ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability High Voltage - High Power GaAs FET DESCRIPTION The FLL21E004ME is a high power GaAs FET that offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers. This device is targeted for high voltage, low current operation in digitally modulated amplification. This product is ideally suited for W-CDMA and Multi-carrier PCS base station amplifiers while offering high gain, long term reliability and ease of use. ABSOLUTE MAXIMUM RATINGS Item Symbol Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Condition Rating 32 -3 18.75 -65 to +175 200 Unit V V W oC oC VDS VGS 　　　Tc=25oC Pt Tstg Tch RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25oC) Item DC Input Voltage Forward Gate Current Reverse Gate Current Channel Temperature Symbol VDS IGF IGR Tch Condition www.DataSheet.co.kr Limit <28 <6.1 >-1.0 155 Unit V mA mA oC RG=100Ω RG=100Ω ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC) Item Symbol Condition min. Pinch-Off Voltage Gate-Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Efficiency Thermal Resistance Vp VGSO P1dB G1dB ηd Rth Channel to Case VDS=5V IDS=0.6mA IGS=-6uA VDS=28V f=2.17GHz IDS(DC)=50mA -0.1 -5 35.0 13.0 ...