16N03L

S E M I C O N D U C T O R RFD16N03L, RFD16N03LSM 16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs Packaging JEDEC TO-251AA SOURCE DRAIN GATE DRAIN (FLANGE) December 1995 Features 16A, 30V rDS(ON) = 0.022Ω Temperature Compensating PSPICE Model Can be Driven Directly from CMOS, NMOS, and TTL Circuits Peak Current vs Pulse Width Curve UIS Rating Curve +175 oC JEDEC TO-252AA DRAIN (FLANGE) Operating Temperature Description The RFD16N03L and RFD16N03LSM are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V - 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. PACKAGE AVAILABILITY PART NUMBER RFD16N03L RFD16N03LSM PACKAGE TO-251AA TO-252AA BRAND 16N03L 16N03L GATE SOURCE Symbol DRAIN www.DataSheet.co.kr GATE SOURCE NOTE: When ordering, use the entire part number. Add the suffix 9A, to obtain the TO-252AA variant in tape and reel, e.g. RFD16N03LSM9A. Formerly developmental type TA49030. Absolute Maximum Ratings TC = +25oC RFD16N03L, RFD16N03LSM 30 30 ±10 1...