FDMC8010

FDMC8010 N-Channel PowerTrench® MOSFET FDMC8010 N-Channel PowerTrench® MOSFET 30 V, 75 A, 1.3 mΩ Features General Description April 2014 „ Max rDS(on) = 1.3 mΩ at VGS = 10 V, ID = 30 A „ Max rDS(on) = 1.8 mΩ at VGS = 4.5 V, ID = 25 A „ High performance technology for extremely low rDS(on) „ Termination is Lead-free and RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for applications where ultra low rDS(on) is required in small spaces such as High performance VRM, POL and Oring functions. Applications „ DC - DC Buck Converters „ Point of Load „ High Efficiency Load Switch and Low Side Switching „ Oring FET Pin 1 Pin 1 SS SG S S D D DDDD Top Bottom Power 33 SD GD MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Volage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25 °C TC = 25 °C TA = 25 °C Single Pulse Avalance Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 4) (Note 1a) (Note 3) (Note 1a) Ratings 30 ±20 75 166 30 120 153 54 2.4 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient ...