N-Channel Enhancement Mode MosFET
SSE9971
Elektronische Bauelemente 25A, 60V,RDS(ON)36m £[ N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product...
Description
SSE9971
Elektronische Bauelemente 25A, 60V,RDS(ON)36m £[ N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
Description
The SSE9971 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications
such as DC/DC converters and high efficiency switching circuit.
Features
* Low On-Resistance
* Simple Drive Requirement
REF. A b c D E L4 L5
www.DataSheet.co.kr
D
Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60
REF. c1 b1 L e L1 Ø A1
Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80
G
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current
1
Symbol
VDS VGS ID@TC=25 C ID@TC=100C IDM PD@TC=25 C
o o o
Ratings
60
± 20 25 16 80 39 0.31
Unit
V V A A A W
W/ C
o o
Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
C
Thermal Data
Parameter
Thermal Resistance Junction-case Thermal Resistance Junction-ambient
Symbol Max. Max.
Rthj-c Rthj-a
Ratings
3.2 62
o o
Unit
C /W C /W
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 4
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