Switching Diode
Data Sheet
Switching Diode
DAN222WM
lApplications High frequency switching lDimensions (Unit : mm) lLand size figure ...
Description
Data Sheet
Switching Diode
DAN222WM
lApplications High frequency switching lDimensions (Unit : mm) lLand size figure (Unit : mm)
1.0 0.5 0.5
0.7
lFeatures 1)Ultra small mold type. (EMD3) 2)High reliability
0.7
1N
0.7
0.6
EMD3
0.6
lConstruction Silicon epitaxial planer
ROHM : EMD3 JEDEC : SOT-416 JEITA : SC-75A dot (year week factory)
lStructure
lTaping dimensions (Unit : mm)
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lAbsolute maximum ratings (Ta=25C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) IFM Forward voltage(repetitive peak) Average rectified forward current Io Isurge Surge current(t=1s) Power dissipation Pd Junction temperature Tj Storage temperature Tstg lElectrical characteristics (Ta=25C) Parameter Symbol VF Forward voltage Reverse current Capacitance between terminals Reverse recovery time IR Ct trr
Limits 80 80 300 100 4 150 150 -55 to +150
Unit V V mA mA A mW C C
Min. -
Typ. -
Max. 1.2 0.1 3.5 4
Unit V μA pF ns IF=100mA VR=70V
Conditions
VR=6V , f=1MHz VR=6V , IF=5mA , RL=50Ω
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1/3
2011.10 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
1.3
DAN222WM
Data Sheet
100
10000 Ta=125°C 1000
FORWARD CURRENT:IF(mA)
10
Ta=125°C
REVERSE CURRENT:IR(nA)
Ta=75°C 100 Ta=25°C
1
Ta=75°C Ta=25°C
10
1
Ta=-25°C
0.1 Ta=-25°C
0.1
0.01 0 0.5 FORWARD VOLTAGE:VF(V) VF-IF CHARACTERISTICS 1
0.01 0 20 40 60 80 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS
10 f=1MHz 0.9 CAPACITA...
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