BH6176GU

1/4 Structure Product Type Functions Silicon Monolithic Integrated Circuit Power Management LSI for MultiMedia LSI on Cellular BH6176GU ・1ch 500mA, high efficiency Step-down Converter. (16 steps adjustable VO by I2C) ・６-channel CMOS-type LDOs. (16 steps adjustable VO by I2C, 150mA×3, 300mA×３) ・LDO and Stepdown converter Power ON/OFF control enabled by I2C interface or external pin ・I2C compatible Interface. (Device address is “1001111”) ・Wafer Level CSP package(2.6mm×2.6mm) for space-constrained applications. Absolute Maximum Ratings（Ta=25C） Parameter Symbol Rating Unit Maximum Supply Voltage (VBAT, PBAT) Maximum Supply Voltage (VUSB) Maximum Supply Voltage (DVDD) Maximum Input Voltage 1 (LX, FB, OUT1, OUT2, OUT3, OUT4, OUT5, OUT6, EN_LD1, EN_LD2, EN_LD3, EN_LD4) Maximum Input Voltage 2 (NRST, CLK, DATA) Power Dissipation VBATMAX VUSBMAX DVDDMAX VINMAX1 VINMAX2 Pd 6.0 6.0 4.5 VBAT + 0.3 DVDD + 0.3 900* 1 V V V V V mW ℃ ℃ Operating Temperature Range Topr -35 ～ +85 Storage Temperature Range Tstg -55 ～ +125 *1 This is the allowable loss of when it is mounted on a ROHM specification board 60mm×60mm. To use at temperature higher than 25C , derate 1% per 1C. Recommended Operating Conditions (Ta=25C) www.DataSheet.co.kr Parameter VBAT, PBAT Voltage VUSB Voltage DVDD Voltage Symbol VBAT VUSB VDVDD * * * 2 2 3 Range 2.20 ～ 5.50 2.20 ～ 5.50 1.70 ～ 4.20 Unit V V V *2 Whenever the VBAT or PBAT or VUSB voltage is under the LDO, SWREG output voltage, the LDO and SWREG out...