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RCD080N25 Dataheets PDF



Part Number RCD080N25
Manufacturers Rohm
Logo Rohm
Description Power MOSFET
Datasheet RCD080N25 DatasheetRCD080N25 Datasheet (PDF)

0.9NotNeRewcDoemsimgennsded for 5.5 1.5 Data Sheet 1.5 9.5 10V Drive Nch MOSFET RCD080N25  Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) High-speed switching. 3) Wide range of SOA. 4) Drive circuits can be simple. 5) Parallel use is easy.  Dimensions (Unit : mm) CPT3 (SC-63) 6.5 5.1 2.3 0.5 0.75 0.9 2.3 (1) (2) 0.65 (3) 2.3 0.8Min. 2.5 0.5 1.0  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RCD080N.

  RCD080N25   RCD080N25


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0.9NotNeRewcDoemsimgennsded for 5.5 1.5 Data Sheet 1.5 9.5 10V Drive Nch MOSFET RCD080N25  Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) High-speed switching. 3) Wide range of SOA. 4) Drive circuits can be simple. 5) Parallel use is easy.  Dimensions (Unit : mm) CPT3 (SC-63) 6.5 5.1 2.3 0.5 0.75 0.9 2.3 (1) (2) 0.65 (3) 2.3 0.8Min. 2.5 0.5 1.0  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RCD080N25 Taping TL 2500   Inner circuit ∗1  Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Source current (Body Diode) Continuous Pulsed Avalanche current Avalanche energy Power dissipation Channel temperature Range of storage temperature VDSS 250 VGSS 30 ID *3 8 IDP *1 32 IS *3 8 ISP *1 32 IAS *2 4 EAS *2 4.67 PD *4 85 Tch 150 Tstg 55 to 150 *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25, Tch=25C *3 Limited only by maximum channel temperature allowed. *4 TC=25C Unit V V A A A A A mJ W C C  Thermal resistance Parameter Channel to Case Symbol Rth (j-c) * * TC=25°C * Limited only by maximum channel temperature allowed. Limits 1.46 Unit C / W (1) Gate (2) Drain (3) Source (1) (2) (3) 1 BODY DIODE www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 1/5 2016.02 - Rev.B NotNeRewcDoemsimgennsded for RCD080N25  Electrical characteristics (Ta = 25C) Parameter Symbol Gate-source leakage IGSS Drain-source breakdown voltage V(BR)DSS Zero gate voltage drain current IDSS Gate threshold voltage Static drain-source on-state resistance VGS (th) RDS * (on) Forward transfer admittance l Yfs l* Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time td(on) * Rise time tr * Turn-off delay time td(off) * Fall time tf * Total gate charge Qg * Gate-source charge Qgs * Gate-drain charge Qgd * *Pulsed Min. - 250 3 - 2.7 -   Typ. - 225 1440 80 40 30 40 40 15 25 10 10 Max. 100 10 5 300 - Unit Conditions nA VGS=30V, VDS=0V V ID=1mA, VGS=0V A VDS=250V, VGS=0V V VDS=10V, ID=1mA m ID=4A, VGS=10V S VDS=10V, ID=4A pF VDS=25V pF VGS=0V pF f=1MHz ns VDD 125V, ID=4A ns VGS=10V ns RL=31.25 ns RG=10 nC VDD 125V, ID=8A nC VGS=10V nC Body diode characteristics (Source-Drain) Parameter Forward Voltage Symbol Min. VSD * - *Pulsed Typ. - Max. Unit Conditions 1.5 V Is=8A, VGS=0V Data Sheet www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 2/5 2016.02 - Rev.B DrainsCurrntim: IDg[A]ennsded Drain Current : ID [A] Drain Current : ID [A] for RCD080N25 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) 2 VGS=10.0V 1.8 VGS=8.0V 1.6 VGS=7.0V Ta=25°C pulsed 1.4 VGS=6.5V 1.2 1 0.8 VGS=6.0V 0.6 0.4 VGS=5.0V VGS=5.5V 0.2 0 0 0.2 0.4 0.6 0.8 1 Drain-Source Voltage : VDS [V] Fig.3 Typical Transfer Characteristics 100 VDS=10V pulsed 10 Ta=125°C Ta=75°C 1 Ta=25°C Ta=-25°C 0.1   0.01 0.001 0 1 2 3 4 5 6 7 8 9 10 Gate-Source Voltage : VGS [V] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 10 VGS=10V pulsed 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 0.01 0.1 1 Drain Current : ID [A] 10 100 Static Drain-Source On-State Resistance : RDS(on) [Ω] Gate Threshold Voltage : VGS(th) [V] Data Sheet 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 Fig.2 Typical Output Characteristics (Ⅱ) VGS=10.0V VGS=8.0V VGS=7.0V VGS=6.5V Ta=25°C pulsed VGS=6.0V VGS=5.0V VGS=5.5V 2468 Drain-Source Voltage : VDS [V] 10 Fig.4 Gate Threshold Voltage vs. Channel Temperature 6 VDS=10V ID=1mA pulsed 5 4 3 2 -50 -25 0 25 50 75 100 125 150 Channel Temperature : Tch [℃] Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature 0.7 VGS=10V pulsed 0.6 0.5 ID=8A 0.4 0.3 ID=4A 0.2 0.1 0 -50 -25 0 25 50 75 100 125 150 Channel Temperature : Tch [℃] Static Drain-SourceNOn-StateoResistancetNeRewcDoem RDS(on) [Ω] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 3/5 2016.02 - Rev.B RCD080N25   Data Sheet Forward Transfer Admittance: Yfs [S] Source Current : Is [A] for StaticeDrain-SourcemsOn-StateimgResistanceennsded RDS(on) [Ω] Fig.7 Forward Transfer Admittance vs. Drain Current 10 VDS=10V pulsed 1 0.1 0.01 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.001 0.001 0.01 0.1 Drain Current : ID [A] 1 10 Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 1 Ta=25°C pulsed 0.8 0.6 ID=4.0A ID=8.0A 0.4 0.2 0 0 2 4 6 8 10 12 14 16 18 20 Gate-Source Voltage : VGS [V] Fig.11 Dynamic Input Characteristics 15 Ta=25°C VDD=125V ID=8A Pulsed 10 5 0 0 5 10 15 20 25 30 35 40 Total Gate Charge : Qg [nC] Capacitance : C [pF] Switching Time : t [ns] Fig.8 Source Current vs. Source-Drain Voltage 100 VGS=0V pulsed 10 T.


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