Document
0.9NotNeRewcDoemsimgennsded for 5.5 1.5
Data Sheet
1.5 9.5
10V Drive Nch MOSFET
RCD080N25
Structure Silicon N-channel MOSFET
Features 1) Low on-resistance. 2) High-speed switching. 3) Wide range of SOA. 4) Drive circuits can be simple. 5) Parallel use is easy.
Dimensions (Unit : mm)
CPT3
(SC-63)
6.5 5.1
2.3 0.5
0.75
0.9 2.3
(1) (2)
0.65 (3) 2.3
0.8Min. 2.5
0.5 1.0
Application Switching
Packaging specifications
Package Type Code
Basic ordering unit (pieces) RCD080N25
Taping TL
2500
Inner circuit
∗1
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Continuous Pulsed
Source current (Body Diode)
Continuous Pulsed
Avalanche current
Avalanche energy
Power dissipation
Channel temperature
Range of storage temperature
VDSS
250
VGSS
30
ID *3
8
IDP *1
32
IS *3
8
ISP *1
32
IAS *2
4
EAS *2
4.67
PD *4
85
Tch 150
Tstg 55 to 150
*1 Pw10s, Duty cycle1%
*2 L 500H, VDD=50V, RG=25, Tch=25C *3 Limited only by maximum channel temperature allowed.
*4 TC=25C
Unit V V A A A A A mJ W C C
Thermal resistance
Parameter Channel to Case
Symbol Rth (j-c) *
* TC=25°C * Limited only by maximum channel temperature allowed.
Limits 1.46
Unit C / W
(1) Gate (2) Drain (3) Source
(1) (2) (3)
1 BODY DIODE
www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved.
1/5
2016.02 - Rev.B
NotNeRewcDoemsimgennsded for
RCD080N25
Electrical characteristics (Ta = 25C)
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR)DSS
Zero gate voltage drain current IDSS
Gate threshold voltage Static drain-source on-state resistance
VGS (th)
RDS
*
(on)
Forward transfer admittance
l Yfs l*
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
td(on) *
Rise time
tr *
Turn-off delay time
td(off) *
Fall time
tf *
Total gate charge
Qg *
Gate-source charge
Qgs *
Gate-drain charge
Qgd *
*Pulsed
Min. -
250 3
-
2.7 -
Typ. -
225
1440
80 40 30 40 40 15 25 10 10
Max. 100
10 5
300
-
Unit Conditions nA VGS=30V, VDS=0V V ID=1mA, VGS=0V A VDS=250V, VGS=0V V VDS=10V, ID=1mA
m ID=4A, VGS=10V
S VDS=10V, ID=4A pF VDS=25V pF VGS=0V pF f=1MHz ns VDD 125V, ID=4A ns VGS=10V ns RL=31.25 ns RG=10 nC VDD 125V, ID=8A nC VGS=10V nC
Body diode characteristics (Source-Drain)
Parameter Forward Voltage
Symbol Min.
VSD *
-
*Pulsed
Typ. -
Max. Unit
Conditions
1.5 V Is=8A, VGS=0V
Data Sheet
www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved.
2/5
2016.02 - Rev.B
DrainsCurrntim: IDg[A]ennsded
Drain Current : ID [A] Drain Current : ID [A]
for
RCD080N25
Electrical characteristic curves (Ta=25C)
Fig.1 Typical Output Characteristics (Ⅰ)
2 VGS=10.0V
1.8 VGS=8.0V
1.6
VGS=7.0V
Ta=25°C pulsed
1.4 VGS=6.5V 1.2
1
0.8
VGS=6.0V 0.6
0.4
VGS=5.0V
VGS=5.5V
0.2
0 0 0.2 0.4 0.6 0.8 1
Drain-Source Voltage : VDS [V]
Fig.3 Typical Transfer Characteristics
100 VDS=10V pulsed
10
Ta=125°C Ta=75°C
1 Ta=25°C Ta=-25°C
0.1
0.01
0.001 0 1 2 3 4 5 6 7 8 9 10
Gate-Source Voltage : VGS [V]
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current
10 VGS=10V pulsed
1
Ta=125°C Ta=75°C Ta=25°C Ta=-25°C
0.1
0.01 0.01
0.1 1 Drain Current : ID [A]
10
100
Static Drain-Source On-State Resistance : RDS(on) [Ω]
Gate Threshold Voltage : VGS(th) [V]
Data Sheet
2 1.8 1.6 1.4 1.2
1 0.8 0.6 0.4 0.2
0 0
Fig.2 Typical Output Characteristics (Ⅱ)
VGS=10.0V VGS=8.0V
VGS=7.0V
VGS=6.5V
Ta=25°C pulsed
VGS=6.0V
VGS=5.0V
VGS=5.5V
2468 Drain-Source Voltage : VDS [V]
10
Fig.4 Gate Threshold Voltage vs. Channel Temperature
6 VDS=10V ID=1mA pulsed
5
4
3
2 -50 -25
0 25 50 75 100 125 150 Channel Temperature : Tch [℃]
Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature
0.7 VGS=10V pulsed
0.6
0.5 ID=8A
0.4 0.3 ID=4A
0.2
0.1
0 -50 -25
0 25 50 75 100 125 150 Channel Temperature : Tch [℃]
Static Drain-SourceNOn-StateoResistancetNeRewcDoem RDS(on) [Ω]
www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved.
3/5
2016.02 - Rev.B
RCD080N25
Data Sheet
Forward Transfer Admittance: Yfs [S] Source Current : Is [A]
for
StaticeDrain-SourcemsOn-StateimgResistanceennsded RDS(on) [Ω]
Fig.7 Forward Transfer Admittance vs. Drain Current
10 VDS=10V pulsed
1
0.1 0.01
Ta=125°C Ta=75°C Ta=25°C Ta=-25°C
0.001 0.001
0.01 0.1 Drain Current : ID [A]
1
10
Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
1 Ta=25°C pulsed
0.8
0.6 ID=4.0A
ID=8.0A
0.4
0.2
0 0 2 4 6 8 10 12 14 16 18 20 Gate-Source Voltage : VGS [V]
Fig.11 Dynamic Input Characteristics
15 Ta=25°C VDD=125V ID=8A Pulsed
10
5
0 0 5 10 15 20 25 30 35 40
Total Gate Charge : Qg [nC]
Capacitance : C [pF]
Switching Time : t [ns]
Fig.8 Source Current vs. Source-Drain Voltage
100 VGS=0V pulsed
10
T.