RCD050N20 Datasheet PDF

Data Sheet 10V Drive Nch MOSFET RCD050N20  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) CPT3 (SC-63)

Data Sheet 10V Drive Nch MOSFET RCD050N20  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) CPT3 (SC-63) 6.5 5.1 2.3 0.5 1.5 5.5 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide range of SOA. 4) Drive circuits can be simple. 5) Parallel use is easy. 0.9 2.3 (1) (2) (3) 2.3 0.8Min. 0.65 0.5 1.0  Application Switching  Packaging specifications Package Code Basic ordering unit (pieces) RCD050N20 Type Taping TL 2500  www.DataSheet.co.kr  Inner circuit ∗1  Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche current Avalanche energy Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25 , T ch=25C (1) Gate (2) Drain (3) Source (1) (2) (3) 1 BODY DIODE Limits 200 30 5 20 5 20 2.5 1.83 20 150 55 to 150 Unit V V A A A A A mJ W C C VDSS Continuous Pulsed Continuous Pulsed VGSS ID *3 IDP IS ISP IAS EAS PD Tch Tstg *1 *3 *1 *2 *2 *4 *3 Limited only by maximum temperature allowed. *4 TC=25C  Thermal resistance Parameter Channel to Case * T C=25°C * Limited only by maximum temperature allowed. Symbol * Rth (ch-c) Limits 6.25 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.09 - Rev.A Datasheet pdf - http://www.DataSheet4U.net/ 2.5 0.75 0.9 1.5 9.5 RCD050N20  Electrical characteristics (Ta = 25 C) Parameter Gate-so...