RBQ10T65A

5.0±0.2NotNeRewcDoemsimgennsded for 8.0±0.2 Schottky Barrier Diode RBQ10T65A Application General rectification Features 1) Cathode common type. 2) Low IR 3) High reliability Construction Silicon epitaxial planar Dimensions (Unit : mm) 4.5±00..31 10.0±00..31 φ3.2±0.2 2.8±00..21 0.4 0.2 15.0± 12.0±0.2 ① 1.2 1.3 0.8 2.45±0.5 2.45±0.5 (1) (2) (3) 14.0±0.5 2.6±0.5 0.75±00..015 ROHM : TO220FN ① : Manufacture date Datasheet Structure (1) (2) (3) Anode Cathode Anode Absolute maximum ratings (Tc= 25°C) Parameter Symbol Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current (*1) VRM VR Io Forward current surge peak (60Hz・1cyc) Junction temperature IFSM Tj Storage temperature Tstg (*1) Rating of per diode : Io/2 Limits 65 65 10 50 150 40 to 150 Unit V V A A °C °C Electrical characteristics (Tj = 25°C) Parameter Forward voltage Reverse current Symbol Min. VF IR - Typ. Max. - 0.69 - 150 Unit Conditions V IF=5A A VR=65V www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/5 2015.07 - Rev.D CAPACITANCENotNeRBETWEENewcDoemsimgennsd TERMINALS : Ct(pF) RBQ10T65A Electrical characteristic curves Data Sheet FORWARDedCURRENTfo: IF(A)r 10 Ta = 150°C 1 Ta = 125°C Ta = 75°C Ta = 25°C 0.1 Ta = 25°C 0.01 0 100 200 300 400 500 600 700 800 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS REVERSE CURRENT : IR(A) 100000 10000 Ta = 150°C 1000 100 10 Ta = 125°C Ta = 75°C 1 Ta = 25°C 0.1 Ta = 25°C 0.01 0 5 10 15 20...