RBQ10T45A

Schottky Barrier Diode RBQ10T45A Datasheet lApplication lDimensions (Unit : mm) lStructure General rectification 4.5±0.3 　　　 0.1 5.0±0.2 8.0±0.2 12.0±0.2 13.5MIN 15.0±0.4 　 0.2 8.0 lFeatures 1) Cathode common type. 2) Low IR 3) High reliability 10.0±0.3 　　　 0.1 2.8±0.2 　　　 0.1 Anode Cathode Anode for d lConstruction de Silicon epitaxial planar 1 1.2 1.3 0.8 (1) (2) (3) ROHM TO220FN 1 Manufacture Date 0.7±0.1 0.05 2.6±0.5 ommeensigns lAbsolute maximum ratings (Tc= 25°C) D Parameter Symbol Limits Unit c Reverse voltage (repetitive) VRM 45 V e w Reverse voltage (DC) VR 45 V R e Average rectified forward current (*1) Io 10 A Forward current surge peak (60Hz・1cyc) IFSM 50 A t N Junction temperature Tj 150 °C o Storage temperature Tstg -40 to +150 °C N(*1) Rating of per diode : Io/2 lElectrical characteristics (Tj = 25°C) Parameter Forward voltage Reverse current Symbol Min. VF - IR - Typ. Max. - 0.65 - 150 Unit Conditions V IF=5A mA VR=45V www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 1/5 2013.06 - Rev.B RBQ10T45A lElectrical characteristic curves Data Sheet FORWARD CURRENT : IF(A) 10 100000 REVERSE CURRENT : IR(mA) Ta = 150°C 1 Ta = 125°C 10000 1000 100 for Ta = 150°C Ta = 125°C Ta = 75°C Ta = 75°C d 0.1 Ta = 25°C e Ta = -25°C d 0.01 0 100 200 300 400 500 600 700 800 n s FORWARD VOLTAGE : VF(mV) e n VF-IF CHARACTERISTICS 10 Ta = 25°C 1 Ta = -25°C 0.1 0.01 0 10 20 30 40 50 REVERSE VOLT...