RBQ10B65A

Data Sheet Schottky Barrier Diode RBQ10B65A Applications General rectification Dimensions (Unit : mm) 6.5±0.2 C0.5 1.5±0.3 2.3±0.2 0.1 0.5±0.1 5.1±0.2 0.1 Land size figure (Unit : mm) 6.0 5.5±0.3 0.1  0.8 min 0.9 （1） （2） （3） 2.3±0.2 2.3±0.2 0.75 0.65±0.1 2.5 3)High reliability 0.5±0.1 1.0±0.2 CPD 2.3 2.3 Construction Silicon epitaxial planer Structure ROHM : CPD JEITA : SC-63  Manufacture Date 　　　　Taping specifications (Unit : mm) www.DataSheet.co.kr Absolute maximum ratings（Tc=25°C） Parameter Symbol VRM Reverse voltage (repetitive peak) VR Reverse voltage (DC) Average rectified forward current (*1) Io IFSM Forward current surge peak （60Hz・1cyc）（*2） Junction temperature Tj Storage temperature Tstg (*1)　Business frequencies, 1/2 Io per diode. (*2)　Per diode. Electrical characteristics（Tj=25°C） Parameter Symbol VF Forward voltage Reverse current IR Limits 65 65 10 50 150 −40 to +150 Unit V V A A °C °C Min. - Typ. - Max. 0.69 0.15 Unit V mA IF=5A VR=65V Conditions www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 3.0 Features 1)Power mold type. (CPD) 2)Low IR 9.5±0.5 1.6 1.6 2.0 6.0 1/4 2012.01 - Rev.A Datasheet pdf - http://www.DataSheet4U.net/ RBQ10B65A 　 Data Sheet 10 100000 Ta=150°C 10000 REVERSE CURRENT:IR(µA) Ta=125°C FORWARD CURRENT:IF(A) 1 Ta=150°C 1000 Ta=125°C 100 Ta=75°C Ta=75°C 0.1 Ta=25°C 10 1 Ta=25°C 0.1 Ta=−25°C 0.01 0 100 200 300 400 500 600 700 800 0.01 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 REVER...