Document
Data Sheet
Schottky Barrier Diode
RBE1VA20A
Applications General rectification Dimensions (Unit : mm)
0.17±0.1 0.05 1.3±0.05
Land size figure (Unit : mm)
1.1
1.9±0.1
2.5±0.2
TUMD2
Structure
0.8±0.05
ROHM : TUMD2 dot (year week factory)
0.6±0.2 0.1
Taping dimensions (Unit : mm)
4.0±0.1 2.0±0.05
8.0±0.2
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3.5±0.05
1.75±0.1
φ1.55±0.1 0
0.25±0.05
1.43±0.05
4.0±0.1
φ1.0±0.2 0
2.75
2.8±0.05
0.9±0.08
Absolute maximum ratings (Tc=25C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) Average rectified forward current Io IFSM Forward current surge peak (60Hz・1cyc) Junction temperature Tj Storage temperature Tstg
Limits 30 20 1 3 125 40 to 125
Unit V V A A C C
Electrical characteristics (Tj=25C) Parameter Symbol VF Forward voltage Reverse current IR
Min. -
Typ. -
Max. 0.53 200
Unit V μA IF=1A VR=20V
Conditions
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1/4
2011.10 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
0.8 0.5
Features 1)Small mold type (TUMD2) 2)High reliability
2.0
RBE1VA20A
Data Sheet
10
100000
10000 FORWARD CURRENT:IF(A) Ta=125°C 1 REVERSE CURRENT:IR(mA) Ta=125°C Ta=75°C 100 Ta=25°C 10
1000
Ta=75°C 0.1 Ta=25°C
1 Ta=-25°C 0.01 0 100 200 300 400 500 600 700 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 0.1 0 5 10 15
Ta=-25°C
20
25
30
REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS
100 f=1MHz FORWARD VOLTAGE:VF(mV)
475 470 465 460 455 450 445 440 435 430
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CAPACITANCE BETWEEN TERMINALS:Ct(pF)
Ta=25°C IF=1A n=30pcs
10
AVE:454.0mV
1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
425 VF DISPERSION MAP
100 Ta=25°C VR=20V n=30pcs
65 Ta=25°C f=1MHz VR=0V n=10pcs AVE:62.8pF 63
REVERSE CURRENT:IR(μA)
80 AVE:83.23μA 70
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
90
64
62
60
61
50 IR DISPERSION MAP
60 Ct DISPERSION MAP
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2/4
2011.10 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
RBE1VA20A
Data Sheet
30
20 Ta=25°C IF=0.5A IR=1A Irr=0.25*IR n=10pcs
REVERSE RECOVERY TIME:trr(ns)
PEAK SURGE FORWARD CURRENT:IFSM(A)
25
IFSM 8.3ms
1cyc
15
20
15
AVE:12.6A
10 AVE:5.8ns
10
5
5
0 IFSM DISPERSION MAP
0 trr DISPERSION MAP
30
30
25 PEAK SURGE FORWARD CURRENT:IFSM(A)
IFSM 8.3ms 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A)
25
IFSM t
20
1cyc
20
15
15
10
10
5
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5
0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100
0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100
1000 Mounted on epoxy board TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) Rth(j-a) FORWARD POWER DISSIPATION:Pf(W)
1
100 Rth(j-c)
D=1/2
0.5
Sin(θ=180)
10
DC
1 0.001
0 0.01 0.1 1 10 100 1000 0 0.5 1 1.5 2 TIME:t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS
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3/4
2011.10 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
RBE1VA20A
Data Sheet
1
3 0A 0V AVERAGE RECTIFIED FORWARD CURRENT:Io(A) t 2 T Io VR D=t/T VR=10V Tj=125°C
REVERSE POWER DISSIPATION:PR (W)
0.5 DC
D=1/2
DC
1
Sin(θ=180)
D=1/2
Sin(θ=180) 0 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE (Io-Ta)
3 Io 0A 0V AVERAGE RECTIFIED FORWARD CURRENT:Io(A) t T DC VR D=t/T VR=10V Tj=125°C
30 AVE:25.0kV 25 ELECTROSTATIC DISCHARGE TEST ESD(KV)
2
20
15
1 D=1/2 Sin(θ=180)
10 AVE:2.6kV 5
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0 0 25 50 75 100 125 CASE TEMPERATURE:Tc(°C) DERATING CURVE (Io-Tc)
0 C=200pF R=0Ω C=100pF R=1.5kΩ
ESD DISPERSION MAP
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2011.10 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
Notice
Notes
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R1120A
Datasheet pdf - http://www.DataSheet4U.net/
.