Document
Data Sheet
Schottky Barrier Diode
RB551SS-30
lApplications General Rectification lDimensions (Unit : mm) lLand size figure (Unit : mm)
0.8
1.6 ±0.05
1.2 ±0.05
0.5
0.4 ±0.05
lFeatures 1)Small mold type (KMD2) 2)High reliability 3)Low VF
0 ~0.03
KMD2
0.8 ±0.05
0.6 ±0.03
0.7 ±0.05
lStructure
lConstruction Silicon epitaxial planer
ROHM : KMD2 JEDEC :JEITA : dot (year week factory)
lTaping dimensions (Unit : mm)
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lAbsolute maximum ratings (Ta=25C) Parameter Symbol VRM Reverse voltage (repetitive peak) VR Reverse voltage (DC) Average rectified forward current Io IFSM Forward current surge peak(60Hz・1cyc.) Junction temperature Tj Storage temperature Tstg lElectrical characteristics (Ta=25C) Parameter Symbol VF1 Forward voltage VF2 Reverse current IR
Limits 30 20 0.5 5 125 -40 to +125
Unit V V A A C C
Min. -
Typ. -
Max. 0.36 0.47 100
Unit V V μA
Conditions IF=100mA IF=500mA VR=20V
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1/4
2011.10 - Rev.A
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1.2
RB551SS-30
Data Sheet
1
100000
10000 FORWARD CURRENT:IF(A) Tj=125°C REVERSE CURRENT:IR(mA) Tj=125°C 1000
0.1
Tj=25°C Tj=75°C
100
Tj=75°C
10
Tj=25°C
0.01 0 100 200 300 400 500 600 700 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS
1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS
100 f=1MHz
340 IF=500mA Tj=25°C
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
FORWARD VOLTAGE:VF(mV)
320
300
10
280 AVE:397.5mV 260
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1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
240 VF DISPERSION MAP
1000 VR=20V Tj=25°C REVERSE CURRENT:IR(mA) CAPACITANCE BETWEEN TERMINALS:Ct(pF)
100 90 80 70 60 AVE:71.4pF 50 40 30 20 10 f=1MHz VR=0V Tj=25°C
100
AVE:45.7mA
10 IR DISPERSION MAP
0 Ct DISPERSION MAP
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2/4
2011.10 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
RB551SS-30
Data Sheet
30
20 IF=0.1A IR=0.1A Irr=0.10×IR 15 Tj=25°C
8.3ms 20 1cyc.
15
REVERSE RECOVERY TIME:trr(ns)
25 ITS ABILITY OF PEAK SURGE FORWARD CURRENT:IFSM(A)
IFSM
10 AVE:6.7ns
10 AVE:13.6A 5
5
0 IFSM DISPERSION MAP
0 trr DISPERSION MAP
100
100
IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 8.3ms 1cyc PEAK SURGE FORWARD CURRENT:IFSM(A)
IFSM time
10
10
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1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100
1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100
1000
0.4 D=1/2 0.3 Sin(θ=180) D.C.
TRANSIENT THERMAL IMPEDANCE:Rth (°C/W)
Rth(j-a) REVERSE POWER DISSIPATION:PR (W) 1000
100 Rth(j-c)
0.2
10
0.1 On glass-epoxy substrate soldering land 50mm□ 1 0.001 0 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 TIME:t(s) Rth-t CHARACTERISTICS REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS
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3/4
2011.10 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
RB551SS-30
Data Sheet
1 0.9 D.C. 0.8 AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
0A 0V t T
Io VR D=t/T VR=10V Tj=125°C
1 0.9 D.C. 0.8 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 Sin(θ=180) D=1/2
0A 0V t T
Io VR D=t/T VR=10V Tj=125°C
0.7 0.6 0.5 Sin(θ=180) 0.4 0.3 0.2 0.1 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE(Io-Ta) D=1/2
0
25 50 75 100 CASE TEMPERATURE:Tc(°C) DERATING CURVE (Io-Tc)
125
30
25 ELECTROSTATIC DISCHARGE TEST ESD(KV) AVE:18.5kV 20
15
10 AVE:1.84kV 5
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0 C=200pF R=0Ω C=100pF R=1.5kΩ
ESD DISPERSION MAP
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4/4
2011.10 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
Notice
Notes
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R1120A
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